50-Å gate-Oxide MOSFET's at 77 K

Extraction of mobility and Degradation coefficients in double gate junctionless transistors

“…It is observed from the figures that θ 2 increases with a reduction in T ox [55]. This is due to increases in the vertical electric field with reduction in T ox that enhances scattering, and thus, reduces mobility [56]. The lower values of mobility can be directly correlated with the degradation of transconductance (g m ) with gate bias.…”

“…The lower values of mobility can be directly correlated with the degradation of transconductance (g m ) with gate bias. For thinner oxide, as the vertical field is increased, g m reduces sharply beyond the peak [56]. The reduction is prominent at lower gate lengths due to increases in the lateral field.…”

Parameter extraction of nano-scale MOSFETs using modified Y function method

“…Therefore it is a very general extraction procedure. The I DS model used for linear regime (small V d , V g >V t ) is given in Eq 1 [8,10].…”

Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations

“…In a second step, the drain current I d (V g ) data obtained in linear region on varying channel length devices were fitted using the LW based Q i (V g ) expression and the standard three parameter mobility model, including the low field mobility μ 0 and the first order θ 1 and second order θ 2 attenuation coefficients [74], [90].…”

“…From the conventional formulation of the effective mobility in strong inversion, i.e. with gate voltage drive [90], μ eff can be expressed with the inversion charge as:…”