500 °C Bipolar SiC Linear Voltage Regulator

Kargarrazi, Saleh; Lanni, Luigia; Saggini, S.; Rusu, Ana; Zetterling, Carl-Mikael

doi:10.1109/ted.2015.2417097

Cited by 33 publications

(8 citation statements)

References 8 publications

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“…A linear voltage regulator based on the nMOS SiC has been successfully designed and tested under at 300 • C [82]. In [83], a bipolar SiC linear voltage regulator was developed to operate at 500 • C. Regarding the ICs structure, in [84], the authors propose a novel 4H-SiC lateral BJT design with symmetric and self-aligned structure, the simulation, and optimization are conducted to operate at the temperature range of 27-500 • C with an optimal current gain. is the study demonstrates that the self-aligned 4H-SiC lateral BJTs design is easier and less costly to produce, with >90% smaller than a conventional structure.…”

Section: Sic-based Mems Devicesmentioning

confidence: 99%

SiC based Miniaturized Devices

2020

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Section: Sic-based Mems Devicesmentioning

confidence: 99%

SiC based Miniaturized Devices

2020

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“…A linear voltage regulator based on the nMOS SiC has been successfully designed and tested under at 300 °C [82]. In [83], a bipolar SiC linear voltage regulator was developed to operate at 500 °C. Regarding the ICs structure, in [84], the authors propose a novel 4H-SiC lateral BJT design with symmetric and self-aligned structure, the simulation, and optimization are conducted to operate at the temperature range of 27–500 °C with an optimal current gain.…”

Section: High-temperature Converter and Mems Devicesmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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“…The bulk of this large-scale integration work has been aimed at supporting gate driver operation and protection, with the goal to support SiC power FETs in power electronics applications. In that vein, protection and regulation circuits such as an under voltage lock-out and two linear regulators have also been reported [16][17][18].…”

Section: A History Of Silicon Carbide Integrated Circuitsmentioning

confidence: 99%

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Rahman

Roy

Murphree

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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500 °C Bipolar SiC Linear Voltage Regulator

Cited by 33 publications

References 8 publications

SiC based Miniaturized Devices

SiC based Miniaturized Devices

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

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