500 GHz GaAs MMIC sampling wafer probe

Shakouri, M.S.; Black, Adam; Auld, B. A.; Bloom, D. M.

doi:10.1049/el:19930372

Cited by 35 publications

(10 citation statements)

References 3 publications

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“…This measured edge speed is the convolution of the NLTL signal and the pulse response of the sampler, so the deconvolved edge has z, , -, = 0.68 p s , from which a sampler bandwidth of 515 GHz is determined. Others have recently reported similar results [7], but with no discussion of the device technology.…”

Section: Circuit Applicationsupporting

confidence: 50%

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Allen

Bhattacharya

Rodwell

15th Annual GaAs IC Symposium

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Section: Circuit Applicationsupporting

confidence: 50%

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Allen

Bhattacharya

Rodwell

15th Annual GaAs IC Symposium

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“…In this experiment, we used nonlinear transmission line ͑NLTL͒ circuits, which can generate subpicosecond voltage steps, 13 as both the source of the sampling signal to the tip and as the circuit under test. In the case of the sampling signal, the integrated high-speed cantilevers were wire bonded to the output of one of the NLTLs.…”

Section: Resultsmentioning

confidence: 99%

Applications of an atomic force microscope voltage probe with ultrafast time resolution

Nechay

Hou

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inAtomic force microscope in liquid with a specially designed probe for practical application Rev. Sci. Instrum. 76, 053705 (2005); 10.1063/1.1897672High-resolution nanowire atomic force microscope probe grownby a field-emission induced process Although scanning probe microscopy is traditionally limited to slow temporal response, techniques utilizing nonlinear tip-to-sample interactions can be used to capture very fast temporal signals. We have developed a scanning force microscope probe which makes use of these techniques for measuring ultrafast voltage signals with both picosecond time resolution and nanometer-scale lateral resolution. Measurements of very large scale integrated and microwave integrated circuits are shown.

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“…Fig. 12 shows a newer design [176] using a micromachined probe tip. Shakouri et al measured a 880-fs fall time (500 GHz) with this apparatus.…”

Section: A Sampling Heads-monolithic Samplersmentioning

confidence: 99%

50 years of RF and microwave sampling

Kahrs

2003

IEEE Trans. Microwave Theory Techn.

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Measurement of microwave and UHF signals is often done with sampling techniques. In this paper, the techniques and technology of sampling of electrical signals is reviewed from 1950 to the present. It includes both references to the open literature, as well as an extensive review of relevant patents. It also provides an overview of sampling applications and the use of computer technology to compensate and correct for errors in the sampling process.

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500 GHz GaAs MMIC sampling wafer probe

Cited by 35 publications

References 3 publications

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

4 THz sidewall-etched varactors for sub-mm-wave sampling circuits

Applications of an atomic force microscope voltage probe with ultrafast time resolution

50 years of RF and microwave sampling

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