2010
DOI: 10.1143/apex.3.091201
|View full text |Cite
|
Sign up to set email alerts
|

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

Abstract: We report the growth of BeZnCdSe quantum-well laser diode (LD) structures with a short-period superlattice cladding layer and demonstrate continuous-wave lasing in the pure-green spectral region (545 nm) at room temperature. The threshold current density and voltage of a 5-µm-wide gain-guided laser were found to be 1.7 kA/cm2 and 10.4 V, respectively. This threshold current density is sufficiently low compared with that of InGaN/GaN green LDs.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
12
1

Year Published

2010
2010
2018
2018

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 18 publications
(13 citation statements)
references
References 13 publications
0
12
1
Order By: Relevance
“…5. Because our BeZnCdSe QW laser diodes in the green spectral region operated under a CW condition at room temperature [5], the PL spectra confirm the high optical quality of all the samples. To examine the microscopic uniformity of the luminescent characteristics, we obtained the PL images of the samples by using fluorescence microscopy.…”
Section: Contributed Articlementioning
confidence: 59%
See 1 more Smart Citation
“…5. Because our BeZnCdSe QW laser diodes in the green spectral region operated under a CW condition at room temperature [5], the PL spectra confirm the high optical quality of all the samples. To examine the microscopic uniformity of the luminescent characteristics, we obtained the PL images of the samples by using fluorescence microscopy.…”
Section: Contributed Articlementioning
confidence: 59%
“…Beryllium-containing ZnSe-based systems have a considerably higher degree of covalency than other II-VI compounds, and therefore, these systems are expected to have longer lifetimes [4]. Recently, we achieved room-temperature continuous-wave (CW) operation of BeZnCdSe quantum-well (QW) LDs on GaAs substrates at the longest wavelength in the green spectral region [5]. There is currently great interest in achieving extension of the lasing wavelength for the realization of yellow LDs using BeZnCdSe QWs.…”
Section: Introductionmentioning
confidence: 99%
“…The maximum power reaches 70 mW, when a reflectivity in a front facet is decreased to 70%. The output power in this LD is much improved, compared with our previous LDs with the maximum output power of 1.5 mW [10]. The main reason is that the effective band gap energy in SPSL is increased from 2.81 to 2.86 eV, indicating that carrier confinement in an active layer is improved due to higher barrier height.…”
Section: Crystal Growth and Ld Structurementioning
confidence: 67%
“…This condition is applied to actual laser structure. Figure 3 shows the X-ray diffraction pattern (ω-2θ scan) of a wafer, from which we fabricated LDs and achieved continuous wave lasing at 545 nm [10]. A BeZnSe waveguide layer and a BeZnMgSe n-cladding layer are grown with lattice-mismatch less than 0.1%, while BeZnCdSe active layer is compressive strain of 2.2 %.…”
Section: Crystal Growth and Ld Structurementioning
confidence: 99%
See 1 more Smart Citation