56‐1: Enhancing Response Time of Quantum‐Dot‐Based TFT Photosensor with Self‐Assembled Monolayer

Jeon, Gilsu; Seo, TaeWon; Ko, Hyungmin; Park, Hyuk; Kwon, Jisu; Ha, Tae‐Yong; Kim, Sungjee; Chung, Yoonyoung

doi:10.1002/sdtp.14798

Cited by 2 publications

(1 citation statement)

References 12 publications

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“…The recovery process is affected by the presence of charge traps in the semiconducting IGZO. [ 7,33 ] The release of the trapped electrons in the absence of light hinders the recovery process, and thus, fast extraction of released electrons to the PM6:Y6 layer can enhance the recovery time. The charge extraction is significantly affected by the ratio of electron and hole mobilities, and the balanced mobilities are known to result in efficient charge extraction.…”

Section: Resultsmentioning

confidence: 99%

IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

Ko,

Yang,

Jeung

et al. 2024

Advanced Optical Materials

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Among various photoresponsive materials, organic materials have gained interest due to their low cost, large‐scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450–950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under 750 nm light with an intensity of only 1.03 nW cm−2. These results highlight the potential of organic materials in developing high‐performance phototransistors.

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Section: Resultsmentioning

confidence: 99%

IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

Ko,

Yang,

Jeung

et al. 2024

Advanced Optical Materials

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Recent Applications and Future Perspectives of Heterojunction Phototransistors Based on Amorphous Oxide Semiconductors

Chen,

Hu,

Sun

et al. 2024

ACS Appl. Electron. Mater.

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Thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) have attracted significant attention in the field of flat-panel displays due to their excellent electrical performance. Heterojunction phototransistors, formed by integrating amorphous oxide semiconductor thin-film transistors (AOSTFTs) with diverse optoelectronic materials, are of significant research interest and possess extensive application potential. Their advantages include a broad responsive spectral range, adjustable photoresponsivity, and high detectivity, making them a promising technology for digital imaging applications, from low-dose X-ray or biofluorescence detection to neuromorphic vision systems. Herein, we summarize the principal working mechanisms, recent research progress, application fields, and development trends of the AOS based heterojunction phototransistors and discuss the challenges that need to be addressed in the near future.

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56‐1: Enhancing Response Time of Quantum‐Dot‐Based TFT Photosensor with Self‐Assembled Monolayer

Cited by 2 publications

References 12 publications

IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

Recent Applications and Future Perspectives of Heterojunction Phototransistors Based on Amorphous Oxide Semiconductors

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