560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs

Klude, M.; Hommel, D.

doi:10.1063/1.1411989

Cited by 45 publications

(19 citation statements)

References 8 publications

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“…Details about the growth of the laser diodes can be found elsewhere [7]. Separate confinement double heterostructure (SCH) laser diodes with a high Cd-content around 40% show stimulated emission around 560 nm.…”

Section: Methodsmentioning

confidence: 99%

Microstructural study of quantum well degradation in ZnSe‐based laser diodes

Roventa

Kröger

Klude

et al. 2004

phys. stat. sol. (c)

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The possibility to grow CdZnSSe quantum structures with a high structural quality is extremely important for light emitting devices in the blue-green spectral range. However, during device operation the degradation of the quantum well reduces the lifetime severely due to the formation of dark spot and dark line defects, which are not clearly understood. To investigate the mechanisms of defects formation degradation studies were performed for ZnSe-based laser diodes with quaternary CdZnSSe quantum well structures by means of electroluminescence, high-resolution X-ray diffraction and transmission electron microscopy. It was found that the degradation is closely connected to a blue shift of the emitted light and the formation of defects which are confined near to the quantum well. A partial broadening of the quantum well could be observed, which is attributed to the outdiffusion of Cd from the active region. 1 Introduction Blue-green light emitting ZnSe-based laser diodes (LDs) have been studied intensively for more than ten years. However, a breakthrough for a reliable technology on this material is hampered by the lack of long-term stability of these devices [1]. Apart from the reduction of stacking faults density, their degradation has been related to two factors: firstly, problems connected with the nitrogen doping used to obtain p-type conductivity (nitrogen related deep complex centers act as efficient nonradiative centers during operation) [2,3] and secondly, the instability of the quantum well (QW) during operation, which is regarded to be the main obstacle for the application of II-VI materials for light emitters. The gradual decrease of the output intensity in the ZnSe-based LD during operation can be related to an occurrence of dark spots and dark line defects [4], but microstructural investigations of the defect formation mechanisms are rare and not really conclusive [5,6].This work reports on the microstructural changes in the active region of the device due to the quantum well degradation. The combination of electroluminescence (EL) measurements, used to analyze the output intensity and peak wavelength of the device, and microstructural sensitive methods comprising high resolution X-ray diffraction (HRXRD), as well as transmission electron microscopy (TEM), provides a clearer picture of the device degradation process.

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Section: Methodsmentioning

confidence: 99%

Microstructural study of quantum well degradation in ZnSe‐based laser diodes

Roventa

Kröger

Klude

et al. 2004

phys. stat. sol. (c)

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“…Yellow LDs are attractive devices for applications in biomedical technology, such as flow cytometry. So far, only ZnCdSSe QW LDs are able to deliver yellow (560 nm) laser emission at room temperature [6]. However, the ZnCdSSe QW LDs are not yet available for practical use, probably because the device lifetime is not optimized.…”

Section: Introductionmentioning

confidence: 99%

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

Kasai

Akimoto

Hasama

et al. 2011

Phys. Status Solidi C

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We have investigated the luminescent properties of highly strained BeZnCdSe quantum wells (QWs). Single‐QW structures were grown on (001) n‐GaAs substrates by molecular beam epitaxy with various Cd beam pressures. High‐resolution X‐ray diffraction measurements revealed that the lattice mismatch between the BeZnCdSe QW and the GaAs substrate changed from 2.1% to 3.0% as the Cd beam pressure was increased. The photoluminescence (PL) spectra showed that the peak wavelength was nearly proportional to the lattice mismatch for each sample. Fluorescence microscopy measurements revealed that the PL images of all the samples showed a similar luminescence distribution, but the images of samples having the lattice mismatch of 2.8% and 3.0% showed some dark lines. These results suggest that flat QW layers were formed in all the samples, but the lattice relaxation of the QW layer occurred in highly strained samples with lattice mismatches greater than 2.8%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…ZnSe and the related materials such as ZnSSe and MgZnSSe, grown on GaAs substrates, have been investigated for blue-green LDs [1][2][3], and MgZnSSe-based LDs have successfully operated around 500 nm under room temperature continuous wave (CW) condition [4,5]. Recently, the lasing-wavelength of II-VI LDs with a ZnCdSSe active layer has reached near 560 nm [6]. However, lifetimes of these LDs were too short for practical use.…”

Section: Introductionmentioning

confidence: 99%

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Kishino

Nomura

2004

phys. stat. sol. (c)

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PACS 78.20.Ci, 78.55.Et, 78.66.Hf, 81.05.Dz, 81.15.Hi, 85.60.Jb II-VI compound materials containing beryllium-chalcogenides such as BeZnTe, ZnCdSe/BeZnTe, and MgSe/BeZnTe superlattices grown on InP substrates have been investigated for yellow-green emitters employing molecular beam epitaxy. Photoluminescence peaks of ZnCdSe/BeZnTe superlattices were widely controlled from 740 to 507 nm by changing the layer thickness combination. Applying ZnCdSe/BeZnTe and MgSe/BeZnTe superlattices, visible light emitting diodes (LEDs) were fabricated emitting at the wavelengths from 554 (yellow-green) to 644 nm (red) at room temperature. For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated. Laser diodes consisting of a ZnCdSe active, a MgSe/ZnCdSe superlattice n-cladding, and a MgSe/BeZnTe superlattice p-cladding layers successfully operated with yellow-green lasing emissions around 560 nm at 77 K.

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560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs

Cited by 45 publications

References 8 publications

Microstructural study of quantum well degradation in ZnSe‐based laser diodes

Microstructural study of quantum well degradation in ZnSe‐based laser diodes

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

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