580µW 2.2-2.4GHz Receiver with +3.3dBm Out-of-Band IIP3 for IoT Applications

Krishnamurthy, Sashank; Maksimovic, Filip; Niknejad, Ali M.

doi:10.1109/esscirc.2018.8494271

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…Power consumption cannot be easily lowered without degrading NF or exploiting advanced CMOS technology. For instance, the sub−600μW DCR in [27] that uses translational positive feedback from BB to RF to perform input matching and improve linearity has an OOB IIP3 of 3.3 dBm and a 12 dB NF. For narrowband systems such as BLE, flicker noise is an additional issue in DCR.…”

Section: A Direct Conversion Rx (Dcr)mentioning

confidence: 99%

Design Considerations for a Sub-mW Receiver Front-End for Internet-of-Things

Kargaran

Manstretta

Castello

2021

IEEE Open J. Solid-State Circuits Soc.

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Internet-of-Things (IoT) and Wireless sensor networks (WSNs) require very low power transceivers. This paper presents techniques for minimizing power consumption of receiver (RX) frontends for short range wireless links. Two key approaches, i.e., current reuse and supply voltage reduction are compared. Different RX architectures such as direct-conversion, low-IF, sliding IF as well as phasetracking RX, are compared, emphasizing their potential and limitations when targeting sub-mW RX power dissipation. Low-power design techniques for LNA, frequency generation blocks and baseband amplifiers are presented. As a case study, an efficient low-IF RX front-end for IoT is described in detail. In 28 nm CMOS, such a receiver occupies an active area of 0.1 mm 2 and consumes only 350 μW from a 0.9 V supply while showing a minimum in band NF of 6.2 dB. The achieved performance is very competitive with state-of-the-art ultra-low-power receivers, while consuming the lowest power.INDEX TERMS Ultra low-power (ULP), current reuse, gm-boosting, complex filter, IoT, ultra-low-voltage (ULV).

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Section: A Direct Conversion Rx (Dcr)mentioning

confidence: 99%

Design Considerations for a Sub-mW Receiver Front-End for Internet-of-Things

Kargaran

Manstretta

Castello

2021

IEEE Open J. Solid-State Circuits Soc.

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“…Further, to achieve the desired input matching and more voltage gain, we propose to use passive matching network instead of power-hungry active blocks [4], [5], [6]. The loss due to the parasitic substrate capacitance of N-path capacitors and charge sharing behavior of read-out capacitors together determine the impedance to be matched and the achievable voltage gain and bandwidth.…”

Section: Lienisscc17 [4]mentioning

confidence: 99%

A Sub-mW All-Passive RF Front End with Implicit Capacitive Stacking Achieving 13 dB Gain, 5 dB NF and +25 dBm OOB-IIP3

Purushothaman

Klumperink

Clavera

et al. 2019

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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This paper presents a sub-mW mixer-first RF front-end that exploits a novel capacitive stacking technique in an altered bottom-plate N-path filter/mixer to achieve passive voltage gain and high-linearity at low noise figure. Capacitive stacking is realized implicitly by reading out the voltage from the bottom-plate of N-path capacitors instead of their top-plate, which provides a 2x gain at the read-out capacitors. Additional passive voltage gain is achieved using impedance upconversion while improving the out-of-band linearity performance of small switches. With no other active circuitry, only clock generation circuits determine the total power consumption of this RF frontend. A prototype is fabricated in GF22 nm FDSOI technology. Operating at fLO= 1 GHz, the prototype achieves a voltage gain of 13 dB, 5 dB Noise Figure and +25/+66 dBm Out-of-band IIP3/IIP2 at 160 MHz offset while consuming only 600 µW of power from a 0.8 V supply.

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“…Low power CMOS receivers typically employ high-Q external filters (e.g., SAW, FBAR) or off-chip and on-chip LC resonant tanks to attenuate the blockers and improve their OOB selectivity [17]- [23]. Recently N-path filters and feedback cancellations [24], [25] are adopted to improve the RF filtering and enhance the linearity performance of the RX. With power consumption ≤ 5 mW, these RXs exhibit OOB IIP3 between -20 and 0 dBm.…”

Section: Introductionmentioning

confidence: 99%

A Fully Passive RF Front End With 13-dB Gain Exploiting Implicit Capacitive Stacking in a Bottom-Plate N-Path Filter/Mixer

Purushothaman

Klumperink

Clavera

et al. 2020

IEEE J. Solid-State Circuits

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A low-power interferer-robust mixer-first receiver front-end that uses a novel capacitive stacking technique in a bottom-plate N-path filter/mixer is proposed. Capacitive stacking is achieved by reading out the voltage from the bottom-plate of N-path capacitors instead of their top-plate, which provides a 2x voltage gain after down-conversion. A step-up transformer is used to improve the out-of-band (OOB) linearity performance of small switches in the N-path mixer, thereby reducing the power consumption of switch drivers. This paper explains the concept of implicit capacitive stacking and analyzes its transfer characteristics. A prototype chip, fabricated in 22 nm FDSOI technology, achieves a voltage gain of 13 dB and OOB IIP3/IIP2 of +25/+66 dBm with 5 dB Noise figure while consuming only 600 µW of power at fLO=1 GHz. Thanks to the transformer, the prototype can operate in the input frequency range of 0.6-1.2 GHz with more than 10 dB voltage gain and 5-9 dB Noise figure. Thus it opens up the possibility of low-power software defined radios.

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580µW 2.2-2.4GHz Receiver with +3.3dBm Out-of-Band IIP3 for IoT Applications

Cited by 5 publications

References 10 publications

Design Considerations for a Sub-mW Receiver Front-End for Internet-of-Things

Design Considerations for a Sub-mW Receiver Front-End for Internet-of-Things

A Sub-mW All-Passive RF Front End with Implicit Capacitive Stacking Achieving 13 dB Gain, 5 dB NF and +25 dBm OOB-IIP3

A Fully Passive RF Front End With 13-dB Gain Exploiting Implicit Capacitive Stacking in a Bottom-Plate N-Path Filter/Mixer

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