6-micron interaction length electro-optic modulation based on lithium niobate photonic crystal cavity

Lu, Huihui; Sadani, Benattou; Ulliac, Gwenn; Courjal, Nadège; Guyot, Clément; Mérolla, Jean-Marc; Collet, Manuel; Baida, Fadi; Bernal, Maria–Pilar

doi:10.1364/oe.20.020884

Cited by 32 publications

(19 citation statements)

References 27 publications

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“…QWs (1) With regard to the high resistance of AlN, 26 the AlGaN resistivity in the OC layer and QWs is at least 1 × 10 12 orders of magnitude larger than that of n-type GaN 27 and ITO. 28 The highly resistive OC layers and QWs connecting in series conduct little current flow while applying limited voltage.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations

Jiang

Lin

et al. 2015

ACS Appl. Mater. Interfaces

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AlGaN has attracted growing interest for applications in electro-optic devices that generate and process optical signals. To enhance the electric-optic effect with polarity, we designed and grew GaN/AlxGa1-xN quantum structures with x of about 0.5 by metal-organic vapor-phase epitaxy. Spectroscopic ellipsometry measurement and ab initio calculation demonstrated that the stronger polarization fields induced by higher Al contents in the barrier result in larger electro-optic effects. By applying external biases directly on both sides of these quantum structures, a high intensity of external field was achieved, and extraordinary and ordinary refractive indices were characterized by fitting the variable-angle spectroscopic ellipsometry. The values of deduced electric-optic coefficients were significantly enhanced by combining the resonance effect with the internal and external fields. Given the comparable electric-optic coefficients with conventional electro-optic crystals, AlGaN is an attractive candidate for nonlinear optical material, which provides a basis for large-scale integrations of ultraviolet electro-optic devices based on nitride semiconductors.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations

Jiang

Lin

et al. 2015

ACS Appl. Mater. Interfaces

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“…The criteria of choosing the defect size not only depends on the properties of the cavity modes such as the transmittance and resonance wavelength but also requires that the cavity mode has strong light confinement ability. An optical field factor f opt , defined as a mean value of the light confinement ability, is employed for this light confinement quantification [10][11][12][13][14]. It is estimated as the ratio of E-field amplitude integration over all the LN cavity region in the PhC structure to the same quantity but integrated on the unstructured LN as follows:…”

Section: D-fdtd Simulations Of Bragg Grating Design In Swgmentioning

confidence: 99%

Ultra-compact on-chip slot Bragg grating structure for small electric field detection

Qiu

Baida

et al. 2017

Photon. Res.

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In this paper, we present an ultra-compact 1D photonic crystal (PhC) Bragg grating design on a thin film lithium niobate slot waveguide (SWG) via 2D-and 3D-FDTD simulations. 2D-FDTD simulations are employed to tune the photonic bandgap (PBG) size, PBG center, cavity resonance wavelength, and the whole size of PhC. 3D-FDTD simulations are carried out to model the real structure by varying different geometrical parameters such as SWG height and PhC size. A moderate resonance quality factor Q of about 300 is achieved with a PhC size of only 0.5 μm × 0.7 μm × 6 μm. The proposed slot Bragg grating structure is then exploited as an electric field (E-field) sensor. The sensitivity is analyzed by 3D-FDTD simulations with a minimum detectable E-field as small as 23 mV∕m. The possible fabrication process of the proposed structure is also discussed. The compact size of the proposed slot Bragg grating structure may have applications in on-chip E-field sensing, optical filtering, etc.

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“…When light was injected from the input port to the drop port at the drop filter or from the add port to the input port at the add filter, the light was transmitted straight through the LN APE microwaveguide. Since the APE waveguide was fabricated in X-Cut LN with the propagation direction of the Y axis, it supports the TE polarization [27][28][29][30]. Hence, the measured PDL from the drop port and input port is much larger than that from the through port of the drop filter.…”

Section: Polarization-dependent Lossmentioning

confidence: 99%

Add-Drop Filter Based on Wavelength-Dependent Light Interlink between Lithium-Niobate Microwaveguide Chip and Microfiber Knot Ring

Zhou

Wang

et al. 2016

Crystals

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Abstract:In this paper, we experimentally demonstrate an add-drop filter based on wavelengthdependent light coupling between a lithium-niobate (LN) microwaveguide chip and a microfiber knot ring (MKR). The MKR was fabricated from a standard single-mode fiber, and the LN microwaveguide chip works as a robust substrate to support the MKR. The guided light can be transmitted through add and drop functionality and the behaviors of the add-drop filter can be clearly observed. Furthermore, its performance dependence on the MKR diameter is also studied experimentally. The approach, using a LN microwaveguide chip as a platform to couple and integrate the MKR, may enable us to realize an optical interlink between the microstructured chip and the micro/nano fiber-optic device.

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6-micron interaction length electro-optic modulation based on lithium niobate photonic crystal cavity

Cited by 32 publications

References 27 publications

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations

Ultra-compact on-chip slot Bragg grating structure for small electric field detection

Add-Drop Filter Based on Wavelength-Dependent Light Interlink between Lithium-Niobate Microwaveguide Chip and Microfiber Knot Ring

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6-micron interaction length electro-optic modulation based on lithium niobate photonic crystal cavity

Cited by 32 publications

References 27 publications

Electro-optic Coefficient Enhancement of AlxGa1–xN via Multiple Field Modulations

Electro-optic Coefficient Enhancement of AlxGa1–xN via Multiple Field Modulations

Ultra-compact on-chip slot Bragg grating structure for small electric field detection

Add-Drop Filter Based on Wavelength-Dependent Light Interlink between Lithium-Niobate Microwaveguide Chip and Microfiber Knot Ring

Contact Info

Product

Resources

About

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations

Electro-optic Coefficient Enhancement of Al_xGa_1–xN via Multiple Field Modulations