600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

Sakakibara, Jun; Noda, Yujiro; Shibata, T.; Nogami, S.; Yamaoka, Tomonori; Yamaguchi, Hitoshi

doi:10.1109/ispsd.2008.4538958

Cited by 49 publications

(20 citation statements)

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“…Recently, epitaxial p-pillar layer of 37 !lm depth in the trench has been formed, and on-resistance has been reduced to about 11 1 0 of a conventional MOSFET. This SJ-MOSFET has the on-resistance of 7.8 mQcm 2 at the breakdown voltage of 600 V class [10]. Figure 13 shows a road map of on-resistance reduction in SJ-MOSFETs.…”

Section: Technical Trend Of Power Mosfetsmentioning

confidence: 99%

Recent technical trends and future prospects of IGBTs and power MOSFETs

Ogura

2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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In this paper, recent technical trends and future prospects of TGBTs and power MOSFETs is presented.Device technologies mainly for reducing power loss are discussed. This is because the reduction in power loss of these power devices is important for home and consumer appliances. Firstly, historical main road maps of these device technologies are introduced. Next, proposed future road maps and distinguishing results are also introduced. And, a comparison with TGBTs, power MOSFETs and SiCMOSFETs is discussed. Finally, T will conclude that Si power devices and SiC-power devices will coexist in home and consumer appliances by taking advantage of each characteristic in the near future.

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Section: Technical Trend Of Power Mosfetsmentioning

confidence: 99%

Recent technical trends and future prospects of IGBTs and power MOSFETs

Ogura

2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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“…These devices use deep trench etching and epitaxial re-growth for making the alternate doped pillar structure. By an optimized trench filling epitaxial growth technique, 680V devices with an extremely low R ON-SP of 7.8 mΩcm have been reported by Denso [11]. Another alternative is the deposition of two epitaxial layers (n and p-type) on the vertical walls of deep trenches, which was first reported by Infineon [12], showing a theoretical 50% reduction of R ON-SP in comparison with a 600V CoolMOS.…”

Section: 5mentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

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Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

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“…Nous avons envisagé ce type de structure car les méthodes de fabrication industrielle actuelles se basent sur des implantations fortes énergies [47], [48], ou sur une succession d'épitaxies et d'implantations [34], [41], [49], [50], ou sur une gravure profonde suivie d'une croissance épitaxiale [32], [33], [51]. Ces différentes techniques étant coûteuses, il était intéressant de proposer une solution adaptée à une tenue en tension de 1200 V. La principale différence avec la Superjonction conventionnelle est le profil de dopage de la colonne P ( Figure II.12).…”

Section: Ii241 Présentation De La Structureunclassified

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

Cited by 49 publications

References 0 publications

Recent technical trends and future prospects of IGBTs and power MOSFETs

Recent technical trends and future prospects of IGBTs and power MOSFETs

A Review of Si MOS-gated Power Switches and PiN Rectifiers

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

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