62–92 GHz low‐noise transformer‐coupled LNA in 90‐nm CMOS

Huang, Chia-En; Liu, J.Y.-C.

doi:10.1049/el.2017.4675

Cited by 14 publications

(9 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

See 1 more Smart Citation

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

Section: Uwb Lnamentioning

confidence: 99%

“…Considering the works of 2010s, [161–200, 201–250, 251–300, 301–361] it seems that optimum ultrawideband designs in the BiCMOS, the CMOS and the HEMT technologies are allocated to [305, 337, 345], respectively. In 2017, Ch.…”

Section: Uwb Lnamentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

show abstract

“…For interstage, matching transformer coupling is the traditional choice. This method not only brings to optimum impedance matching and noise figure (NF) but also enlarges the bandwidth [17]. However, the use of inductive coupling has its obvious limitations.…”

Section: Introductionmentioning

confidence: 99%

Performance of ultra‐wide band DCBLNA with suspended strip line radiator for human breast cancer diagnosis medical imaging application

Roy

Kanaujia

Dwari

et al. 2020

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

“…However, a CMOS Rx front-end suffers several drawbacks in terms of noise and linearity, which limit the detectable range and sensitivity of the radar systems [4]. Many circuit structures have been proposed to improve the performance of CMOS Rx for 77 GHz application [5][6][7][8][9][10][11][12][13][14][15][16], but the linearity of CMOS Rx is still limited and many of them occupy a large silicon area. In order to meet the different requirements of automotive radar supporting both short-and longrange communications, the Rx front-end requires high linearity.…”

Section: Introductionmentioning

confidence: 99%

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Pan

Daun

Sun

et al. 2019

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1-9.1 dB over the frequency range of 68.9-80.2 GHz, an NF of 7.8-9.1 dB over the range of 76-81 GHz, and LO-radio frequency isolation of 55-60 dB over 60-90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm 2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.

show abstract

62–92 GHz low‐noise transformer‐coupled LNA in 90‐nm CMOS

Cited by 14 publications

References 8 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Performance of ultra‐wide band DCBLNA with suspended strip line radiator for human breast cancer diagnosis medical imaging application

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Contact Info

Product

Resources

About