Room temperature photoluminescence (RTPL) and Raman spectroscopy were used for characterizing plasma-induced-damage (PID) of Si during plasma assisted Si processing. Oxide films with thicknesses of ∼200 and ∼600 nm were grown on 300 mm wafers by plasma enhanced chemical deposition (PECVD). Bare Si wafers with native oxide and PECVD oxide films were plasma etched under different etching and bias radio frequency (RF) power conditions. Oxide etch rate, oxide uniformity and RTPL spectra/intensity were measured and characterized under three excitation wavelengths (532, 650 and 827 nm) with different probing depths. High spectral resolution Raman measurements were performed under various excitation wavelengths from the ultraviolet (UV) to visible (VIS) region to verify the distribution of plasma etching damage in the depth direction as a function of plasma etching condition and structure of specimens. A distinct pattern of PID, corresponding to showerhead patterns, common to a typical plasma etching system, was observed from RTPL wafer mapping results. Multiwavelength Raman characterization revealed that the physical damage to the Si crystalline lattice, from plasma etching, was concentrated at, or near, the Si surface and SiO 2 /Si interface. Identification and characterization of PID were successfully done by using multiwavelength RTPL and Raman spectroscopy.

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A 69-92 GHz wideband low-noise amplifier (LNA) in a 90-nm CMOS process is presented. A transformer-based shunt-series feedback is designed to achieve a broad input matching and minimum noise figure (NF) simultaneously. Interstage matching is achieved by the on-chip transformer. The proposed four-stage common-source LNA achieves a wide 3-dB bandwidth of 23 GHz, a peak gain of 7.6 dB at 76 GHz, a minimum NF of 6.6 dB at 80 GHz, and an input 1-dB compression point of −7 dBm. The circuit occupies an area of 0.675 × 0.87 mm 2 and consumes 11.3 mW under a 1.2 V supply.