64.4: Submicron Pixel Electrode Structure in IPS Mode

Abstract

To improve the transmittance in IPS mode, submicron pixel electrodes were developed by new patterning process and structure. Unlike typical horizontal electrode structure, the electrodes are vertically formed on the sidewall with our new process. As a simulation result, these submicron electrodes improved transmittance about 10% than conventional type. With this new process, 15-inch panel was successfully fabricated.. / J.-Y. Yang SID 2012 DIGEST • 877

A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process

“…After the PR ashing process is completed, only the a-ITO on top of the 1 st PR is exposed, and the poor adhesion property between PR/a-ITO/PR accelerates the side-etching of the a-ITO. This property promotes the selective etching of the a-ITO on the 1 st PR pattern, leaving the a-ITO directly deposited on the substrate [7].…”

21.3: A Novel 5‐Mask Etch‐Stopper Pixel Structure with A Short Channel Oxide Semiconductor TFT

“…Unlike the conventional ES structure, a short channel length (under 5 μm) TFT was achieved using a damage preventing layer (DPL) structure. DPL pattern is self-aligned pattern and could be realized by 3-D patterning technology like as contact hole filling process (CHF) [5] [6]. And also the overlap area between gate and ES layer could be eliminated by self-aligned DPL pattering process, as results, Cgs could be reduced more than 30%.…”

Fast Fringe-field-switching Liquid Crystal Cell with a Protrusion Structure

“…However, protrusion technology has been already used in the MVA or IPS mode [13,14]. Therefore, we believe that the proposed method can be a useful method to reduce the response time in spite of the difficulty in fabrication.…”