64°C continuous-wave operation of 1.5-μm vertical-cavity laser

Margalit, N.M.; Piprek, Joachim; Zhang, S.; Babic, D.I.; Streubel, K.; Mirin, Richard P.; Wesselmann, J.R.; Bowers, John E.

doi:10.1109/2944.605679

Cited by 79 publications

(21 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A threshold voltage of about 3 V is typical for fused VCL's since the p-GaAs/p-InP interfaces causes a voltage drop due to charged defects. Our measured CW threshold current density is 8 kA/cm 2 assuming an oxide aperture diameter of 12 m. This number is much larger than in previous devices that have shown values near 1 kA/cm 2 and threshold currents as low as 0.8 mA (3 m aperture) [8]. Those record-low currents are correlated to an almost vanishing self-heating [8].…”

Section: Discussionmentioning

confidence: 44%

“…Our measured CW threshold current density is 8 kA/cm 2 assuming an oxide aperture diameter of 12 m. This number is much larger than in previous devices that have shown values near 1 kA/cm 2 and threshold currents as low as 0.8 mA (3 m aperture) [8]. Those record-low currents are correlated to an almost vanishing self-heating [8]. In our present devices, the high threshold currents may be caused by leakage currents due to packaging and low temperature degradation.…”

Section: Discussionmentioning

confidence: 49%

“…10. With a 2.5-V threshold voltage, the heat power is 4.25 mW at 180 K. Assuming 1000 K/W thermal resistance [8] we estimate only about 4 K MQW self-heating at threshold. For a 200-device array that we envision for future Terabits/s data links, the total heat power is about 0.9 W. This thermal budget would be acceptable with present cooling technology.…”

Section: Discussionmentioning

confidence: 76%

“…Due to self-heating, a shift of to lower stage temperatures is expected in CW operation. We can estimate a 35 K MQW temperature increase from 10 mA 3.5 V heat power and 1000 K/W thermal resistance [8]. This temperature increase could generate a CW threshold minimum at the stage temperature of 145 K, but such a minimum is not observed.…”

Section: Resultsmentioning

confidence: 90%

See 3 more Smart Citations

Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Zhang

Piprek

Margalit

et al. 1999

J. Lightwave Technol.

Self Cite

View full text Add to dashboard Cite

Abstract-The low-temperature performance of vertical cavity lasers (VCL's) is of interest for high-speed data transmission from superconducting and cryogenic semiconductor circuits. Our double-fused 1.5 m lasers employ a strain-compensated InGaAsP/InP multiquantum-well (MQW) active region that is sandwiched between two AlGaAs/GaAs distributed Bragg reflectors. Continuous wave (CW) lasing at ambient temperature as low as 7 K is measured on the same type of top-emitting devices that previously lased at a record-high temperature of 337 K. The optimum temperature is found at 180 K giving minimum threshold current, maximum modulation bandwidth of 5 GHz, and more than 3 GHz/mA 1/2 modulation current efficiency. The optimum temperature agrees very well with the theoretical prediction. Further device optimization for cryogenic high-speed applications is discussed in detail.

show abstract

Section: Discussionmentioning

confidence: 44%

Section: Discussionmentioning

confidence: 49%

Section: Discussionmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 90%

See 2 more Smart Citations

Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Zhang

Piprek

Margalit

et al. 1999

J. Lightwave Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Many types of semiconductor lasers such as vertical cavity surface emitting lasers (VCSEL's) or distributed feedback (DFB) lasers can generate large heat power densities on the order of kW/cm 2 over areas as small as 100µm 2 [1]. Under these conditions, the active region can reach temperatures greater than 70°C above the heat sink temperature.…”

Section: Monolithic Integration Of Solid State Thermionic Coolers Witmentioning

confidence: 99%

Monolithic integration of solid state thermionic coolers with semiconductor lasers

LaBounty¹,

Oberle²,

Piprek³

et al.

LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 An

Self Cite

View full text Add to dashboard Cite

show abstract

Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

Piprek

2001

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

The performance of oxide‐confined vertical‐cavity lasers (VCLs) can be severely limited by current leakage and self‐heating. This paper investigates electrical and thermal effects of lateral oxidation on wafer‐bonded 1.55 μm VCLs. Measurements are combined with two‐dimensional finite‐element simulations to analyze internal device physics. Charged defects at the p‐side fused interface are found to increase the threshold voltage as well as lateral current spreading. An optimum oxide aperture for minimum device heating is calculated. Loss reductions are predicted to lead to a minimization of self‐heating with small apertures.

show abstract

64°C continuous-wave operation of 1.5-μm vertical-cavity laser

Cited by 79 publications

References 16 publications

Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Monolithic integration of solid state thermionic coolers with semiconductor lasers

Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

Contact Info

Product

Resources

About