76-km transmission over standard dispersion fiber at 10 Gbit/s using a high-power integrated laser modulator and a PIN receiver without any optical amplifier

Lesterlin, D.; Artigaud, S.; Provos, J.G.; Lestra, A.; Brosson, P.; Gouezigou, O. Le; Grosskopf, H.; Carpentier, D.; Michaud, G.; Pinquier, A.; Haisch, H.; Vinchant, J.F.

doi:10.1109/ofc.1997.719820

Cited by 10 publications

(3 citation statements)

References 2 publications

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“…For the device structure, double ridge structure was employed in SOA/EAM section. A ridge structure exhibits very low capacitances, which enables high bit-rate operation in integrated laser-modulators [9]. For the SSC sections, a buried ridge stripe (BRS) was incorporated.…”

Section: Introductionmentioning

confidence: 99%

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

Hou

Zhu

Zhang

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

Hou

Zhu

Zhang

et al. 2006

Journal of Crystal Growth

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“…Such a combination makes it easy to control the beam divergence at the output facet because the taper shape and the passive waveguide can be optimized independently. As for the device structure, a conventional double-ridge-structure LD/EAM section is employed to reduce the EAM capacitances to enable high-bit-rate operation [10], and a double-core buried-ridge-structure (BRS) SSC section is incorporated at the input and output ports, respectively. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of the simplicity, easy fabrication of ridge structure and the excellent mode characteristic of BRS.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

Hou¹,

Wang²,

Zhu³

et al. 2005

Semicond. Sci. Technol.

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We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 • × 10.6 • , respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

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“…For the device structure, a double ridge structure was employed in the SOA/EAM section. A ridge structure exhibits very low capacitances, which enables high bit-rate operation in integrated laser-modulators [13]. For the SSC sections, a buried ridge double-core structure (BRS) was incorporated.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

Hou¹,

Zhu

Fan³

et al. 2005

Semicond. Sci. Technol.

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We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 • × 12.6 • , resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

show abstract

76-km transmission over standard dispersion fiber at 10 Gbit/s using a high-power integrated laser modulator and a PIN receiver without any optical amplifier

Cited by 10 publications

References 2 publications

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

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