80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane

Kim, Jeonggi; Lee, Ji-Hun; Jang, Jin

doi:10.1002/sdtp.12129

Cited by 11 publications

(10 citation statements)

References 16 publications

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“…Thus, presently, n-type oxide TFTs, for example, indium gallium zinc oxide (IGZO), exhibiting high electron mobility ( µ e ) of >10 cm 2 V −1 s −1 and decent operational stability, are adopted for large-area and foldable AM-OLED displays. Various n-type oxide TFTs have also been utilized for AM-QLEDs [ 20 , 21 , 24 , 32 ], as shown in Figure 1 . Nevertheless, p-type TFTs are also needed to comply with various QLED architectures (e.g., normal and inverted structures) and solution-based QLED fabrication processes.…”

Section: Non-si Tft Backplane Technologymentioning

confidence: 99%

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

et al. 2022

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This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

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Section: Non-si Tft Backplane Technologymentioning

confidence: 99%

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

et al. 2022

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“…The implementation of active-matrix QLEDs (AMQLEDs) is highly meaningful for the realization of QLED displays. A few companies and research groups have demonstrated monochromic or full-color AMQLEDs [67][68][69][70][71][72][73], as shown in Figure 2. For the monochromatic AMQLEDs, the QD layer can be formed through spin-coating.…”

Section: Demonstration Of Active-matrix Qled Displaysmentioning

confidence: 99%

Progress of display performances: AR, VR, QLED, and OLED

Jang

Lee

Kim

et al. 2020

Journal of Information Display

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In 2019, the device performances of the display technologies were largely advanced by the development of new materials and of the device architecture and driving scheme. The recent progress in the areas of virtual reality (VR), augmented reality (AR), quantum dot light-emitting diode (QLED), and organic light-emitting diode (OLED) is comprehensively summarized and discussed in this paper. ARTICLE HISTORY

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“…Both passive-matrix (PM) and active-matrix (AM) driving electrode systems may be used to realize display applications, where the latter is beneficial for a larger display area or higher resolution. In terms of AM-based QLED, the conventional device design is bottom-emitting, where the light emission is extracted from the glass substrate side [ 29 , 30 , 31 , 32 ]. However, the opening of the bottom-emitting device and the light intensity are limited by the opaque thin-film transistor (TFT) circuit in the AM backplane.…”

Section: Introductionmentioning

confidence: 99%

Top-Emitting Active-Matrix Quantum Dot Light-Emitting Diode Array with Optical Microcavity for Micro QLED Display

Lai

Yang²,

Tsai³

et al. 2022

Nanomaterials

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An electroluminescent quantum-dot light-emitting diode (QLED) device and a micro QLED device array with a top-emitting structure were demonstrated in this study. The QLED device was fabricated in the normal structure of [ITO/Ag/ITO anode]/PEDOT:PSS/PVK/QDs/[ZnO nanoparticles]/Ag/MoO3, in which the semi-transparent MoO3-capped Ag cathode and the reflective ITO/metal/ITO (IMI) anode were designed to form an optical microcavity. Compared with conventional bottom-emitting QLED, the microcavity-based top-emitting QLED possessed enhanced optical properties, e.g., ~500% luminance, ~300% current efficiency, and a narrower bandwidth. A 1.49 inch micro QLED panel with 86,400 top-emitting QLED devices in two different sizes (17 × 78 μm2 and 74 × 40.5 μm2) on a low-temperature polysilicon (LTPS) backplane was also fabricated, demonstrating the top-emitting QLED with microcavity as a promising structure in future micro display applications.

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80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane

Cited by 11 publications

References 16 publications

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Progress of display performances: AR, VR, QLED, and OLED

Top-Emitting Active-Matrix Quantum Dot Light-Emitting Diode Array with Optical Microcavity for Micro QLED Display

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