80 GHz MMIC HEMT VCO

Abstract

In this letter, a monolithic voltage-controlled oscillator (VCO) operating in the 77.5-83.5 GHz range is presented. InP HEMTs are used for both the active device and varactor. The VCO demonstrated a tuning range of 6 GHz and an output power better than 12.5 dBm in the entire tuning range.

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

“…3, which indicates the phase noise to be -88 dBc/Hz at 1-MHz offset. This is not only the best phase noise result among the previously reported W-band HEMT VCOs [1]- [5], but also rivals those of the HBTbased VCOs [6]- [7]. …”

“…With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1/f noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”

An Ultra Low Phase Noise W-Band GaAs-Based PHEMT MMIC CPW VCO

“…3, which indicates the phase noise to be -88 dBc/Hz at 1-MHz offset. This is not only the best phase noise result among the previously reported W-band HEMT VCOs [1]- [5], but also rivals those of the HBTbased VCOs [6]- [7]. Although this W-band GCPW VCO utilized the same HEMT device (0.1-ptm GaAs-based PHEMT MMIC process provided by TRW) and a similar circuit architecture as the W-band microstrip-line VCO reported in [1], the phase noise performance is significantly different from each other.…”

“…A phase noise of -88 dBc/Hz at 1-MHz offset was achieved, which is the best result among the previously published VCOs in this frequency regime. [1] et al, [2] et al, [3] Siweris et et al, [5] Koba[ashi et al, [7] [8]…”

“…With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1If noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”