800MHz Single-Photon Detection at 1550-nm Using an InGaAs/InP Avalanche Photodiode Operated with a Sinusoidal Gating

Namekata, Naoto; Sasamori, S.; Inoue, Shuichiro

doi:10.1109/ecoc.2006.4801376

Cited by 3 publications

(3 citation statements)

References 6 publications

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“…It decreases the photon detection signal, and so the detection efficiency. Moreover, high rejection ratio is required; 60 dB-70 dB for the fundamental wave and 30 dB-40 dB for the second harmonic [5,6]. Therefore SAPD requires the BEFs in multiple stages, which results in the complicated configuration.…”

Section: Introductionmentioning

confidence: 97%

“…Increasing the threshold in the discriminator will reduce the false counts at the cost of detection efficiency. One method is to drive an APD with sinusoidal wave voltage as gating signal and the gate noise is removed by Band Elimination Filters (BEF) [5] [6]. A gated mode InGaAs-SAPD has been reported to show low dark count probability (10 -6 gate per pulse) and high detection efficiency (>25 %) [5].…”

Section: Introductionmentioning

confidence: 99%

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High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

2014

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Because of low power consumption and small footprint, avalanche photodiodes (APD) have been commonly applied to photon detection. Recently, high speed quantum communication has been demonstrated for high bit-rate quantum key distribution. For the high speed quantum communication, photon detectors should operate at GHz-clock frequencies. We propose balanced detection circuits for GHz-clock operation of InGaAs-APD photon detectors. The balanced single photon detector operates with sinusoidal wave gating. The sinusoidal wave appearing in the output is removed by the subtraction from APD signal without sharp band-elimination filters. Omission of the sharp filters removes the constraint on the operating frequency of the single photon detector. We present two designs, one works with two identical APDs, the other with one APD and a low-pass filter. The sinusoidal gating enables to eliminate the gating noise even with the simple configuration of the latter design. We demonstrated the balanced single photon detector operating with 1.020GHz clock at 233 K, 193 K, and 186.5 K. The dark count probability was 4.0 x 10 -4 counts/pulse with the quantum efficiency of 10% at 233K, and 1.6 x 10 -4 counts/pulse at 186.5 K. These results were obtained with easily available APDs (NR8300FP-C.C, RENESASS) originally developed for optical time-domain reflectmeters.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

2014

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“…Precise timing circuits are required to differentiate between an avalanche signal and the end of the gate. Periodical signals can also be applied on the APD: in [10] for instance, a sine wave gating operation is proposed. If gated mode is essential to reduce noise, synchronous operation is unfortunately not well suited to applications like in spectroscopy, biology or astronomy, where photons usually do not arrive at a predefined time.…”

Section: Introductionmentioning

confidence: 99%

ASIC for high-speed-gating and free running operation of SPADs

Rochas

Guillaume-Gentil

Gautier³

et al. 2007

SPIE Proceedings

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Single photon detection at telecom wavelengths is of importance in many industrial applications ranging from quantum cryptography, quantum optics, optical time domain reflectometry, non-invasive testing of VLSI circuits, eye-safe LIDAR to laser ranging. In practical applications, the combination of an InGaAs/InP APD with an appropriate electronic circuit still stands as the best solution in comparison with emerging technologies such as superconducting single photon detectors, MCP-PMTs for the near IR or up-conversion technique. An ASIC dedicated to the operation of InGaAs/InP APDs in both gated mode and free-running mode is presented. The 1.6mm 2 chip is fabricated in a CMOS technology. It combines a gate generator, a voltage limiter, a fast comparator, a precise timing circuit for the gate signal processing and an output stage. A pulse amplitude of up to +7V can be achieved, which allows the operation of commercially available APDs at a single photon detection probability larger than 25% at 1.55µm. The avalanche quenching process is extremely fast, thus reducing the afterpulsing effects. The packaging of the diode in close proximity with the quenching circuit enables high speed gating at frequencies larger than 10MHz. The reduced connection lengths combined with impedance adaptation technique provide excellent gate quality, free of oscillations or bumps. The excess bias voltage is thus constant over the gate width leading to a stable single photon detection probability and timing resolution. The CMOS integration guarantees long-term stability, reliability and compactness.

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Progress in Quenching Circuits for Single Photon Avalanche Diodes

Gallivanoni

Rech

Ghioni

2010

IEEE Trans. Nucl. Sci.

109

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Abstract—An ever wider variety of applications employ Single\ud Photon Avalanche Diodes (SPADs) for the detection of faint optical\ud signals. SPADs are p-n junction biased above the breakdown\ud voltage and operate in Geiger-mode: each electron-hole pair can\ud trigger an avalanche multiplication process that causes the current\ud to swiftly rise to its final value. Additional quenching electronics\ud is necessary for a SPAD proper working. The additional\ud electronics characteristics directly affect the system’s obtainable\ud performances. Different quenching circuits affect the detector performances\ud in different ways. In the last 15 years there has been\ud considerable development in the integration of the quenching circuitry\ud directly with the detector, thus leading to improved performances.\ud This paper reviews the state of the art of this evolution,\ud examining and comparing different classes of quenching circuits\ud and explaining their mode of operations, their advantages and disadvantages

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800MHz Single-Photon Detection at 1550-nm Using an InGaAs/InP Avalanche Photodiode Operated with a Sinusoidal Gating

Cited by 3 publications

References 6 publications

High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

High-speed bridge circuit for InGaAs avalanche photodiode single-photon detector

ASIC for high-speed-gating and free running operation of SPADs

Progress in Quenching Circuits for Single Photon Avalanche Diodes

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