95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

Considerations in the design of a low‐voltage power MOSFET technology

“…Depth of the gate is, therefore, a critical parameter to control in manufacturing since even small process variations can lead to large variations in Q GD and performance in the application. For optimal switching performance, the products of Q G •R DS(on) (Q G Figure Of [36][37][38], and employing a source-connected shielding terminal located directly below the gate [25,26].…”

“…The drift region of a MOSFET is responsible for maintaining the blocking‐voltage of the device and therefore its importance is related to the voltage rating of the technology. Minimising drift‐resistance involves using some form of RESURF, which usually takes the form of a superjunction [23, 24] or shielded‐gate (charge balance) [25, 26]; examples of these structures are seen in Fig. 10.…”

“…Pursuing low R DS(on) via aggressive cell pitch reduction (<1 µm) is detrimental to low Q G and Q GD FOMs since gate capacitance increases faster than R DS(on) reduces as cell pitch is reduced. To circumvent this trend, strategies have been devised that mitigate this increase in gate capacitance with pitch scaling such as the use of a thick oxide layer at the bottom of the trench [36–38], and employing a source‐connected shielding terminal located directly below the gate [25, 26].…”

“…The body‐effect is enhanced by reducing gate oxide thickness and threshold voltage, which are limited by other considerations. By connecting some trench gates to the source, these limitations can be overcome and the body effect made highly effective to give Schottky‐like performance with very low V f [26, 50]. This is illustrated in Fig.…”

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

“…O. Häberlen and his team proposed a conventional SGT MOS with BCD (CBCD-SGT) which is arranged one BCD and three normal cells alternately, as shown in Fig. 1 (b) [25], to improve the DC-DC conversion efficiency. However, this structure has the problem that the current is not uniform in the forward and reverse conduction.…”