A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

Chen, T.H.; Tan, K. H.; Dow, G.S.; Wang, H.; Chang, Kuo-Ming; Ton, T.N.; Allen, B.; Berenz, J.; Liu, P.H.; Streit, D.C.; Hayashibara, G.M.

doi:10.1109/gaas.1992.247220

Cited by 35 publications

(4 citation statements)

References 7 publications

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“…Output power capability for W-band amplifiers has been demonstrated and enhanced in the past few years [3]- [6]. Presented in this paper is a two-stage monolithic power amplifier using the 0.1-pm power HEMT process but on a thinned 2-mil GaAs substrate.…”

Section: Ntrod Uctlo Nmentioning

confidence: 98%

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A 94 GHz monolithic high output power amplifier

Huang¹,

Lin²,

Lai³

et al.

1997 IEEE MTT-S International Microwave Symposium Digest

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A two-stage monolithic W-band power amplifier using 0.1 -pm pseudomorphic AIGaAs/lnGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMlC PA exhibits 8 dB linear gain and a maximum output power of 300mW with 10.5% peak power-added efficiency at 94GHz.The substrate thickness is 2 mil Eo take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

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Section: Ntrod Uctlo Nmentioning

confidence: 98%

“…Various W-band MMlC low noise amplifiers [l j-[2] and power amplifiers [3]- [6] have been successfully demonstrated using AIGaAsl InGaAs/GaAs pseudomorphic T-gate power HEMT with 0.1 -pm gate length. Output power capability for W-band amplifiers has been demonstrated and enhanced in the past few years [3]- [6].…”

Section: Ntrod Uctlo Nmentioning

confidence: 99%

A 94 GHz monolithic high output power amplifier

Huang¹,

Lin²,

Lai³

et al.

1997 IEEE MTT-S International Microwave Symposium Digest

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“…A few works on power MMIC amplifiers above Vband were reported so far (2). (3). However, the detailed ampuler performances such as input and output return losses were not clarified so much.…”

Section: Introductionmentioning

confidence: 97%

High gain V-band heterojunction FET MMIC power amplifiers

Funabashi¹,

Hosoya²,

Ohata³

et al.

15th Annual GaAs IC Symposium

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High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0 . 1 5~ T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high fmax of 227GHz with high gate breakdown voltage of -13V. A single-stage 65GHz-band amplifer has exhibited 8.7dB small signal gain with the 1dB-gain-down bandwidth of 2GHz. A single-stage 60GHz-band amplifier has achieved 8.4dB gain with 3GHz bandwidth and good input and output impedance matching. The output power of 37.2mW with high power-added-efficiency of 25.6% at 61.2GHz has been obtained at 3V drain bias.

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“…version delivers a record power of 2.4 W at 8.2% power-added efficiency with an associated gain of 12 dB at CW condition. The InP HEMT version delivers a compatible power of 2.24W at 9.9% PAE with much higher associated gain of 19.5 dJ3.…”

mentioning

confidence: 99%

Compact W-band solid-state MMIC high power sources

Ingram

Chen

Stones

et al.

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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Presented is the development of two >2W W-band solid-state monolithic microwave integrated circuit (MMIC) power amplifier modules using TRW's advanced GaAs-and InPbased HEMT MMICs. The GaAs HEMT version delivers a record power of 2.4 W at 8.2% power-added efficiency with an associated gain of 12 dB at CW condition. The InP HEMT version delivers a compatible power of 2.24W at 9.9% PAE with much higher associated gain of 19.5 dJ3. These are the highest recorded Wband power module using solid-state MMIC technology. The measured results clearly show that InP HEMT technology, though operating at a lower drain voltage (2.5 -3V) than GaAs HEMT device (typically 3.5 -4V), offers a better power-efficiency combination at much higher associated gain than its GaAs counterpart at millimeter-wave frequency. The overall module only weighs 10 oz. in a volume of < 4 in3. This is the smallest 2.4-watt W-band highpower module to date,

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A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

Cited by 35 publications

References 7 publications

A 94 GHz monolithic high output power amplifier

A 94 GHz monolithic high output power amplifier

High gain V-band heterojunction FET MMIC power amplifiers

Compact W-band solid-state MMIC high power sources

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