A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

Noda, K.; Tatsumi, Toru; Uchida, Teiji; Nakajima, Ken; Miyata, Hiroshi; Hu, Chenming

doi:10.1109/16.662780

Cited by 62 publications

(31 citation statements)

References 4 publications

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“…This, in turn, will increase the source and drain capacitances and will reduce the breakdown voltage. A carefully positioned -doping layer below the epitaxial channel [19] can provide an efficient short channel and threshold voltage control, reducing to some extent the detrimental heavy doping effects. Using our atomistic simulation approach, we study for the first time the effect of such a delta-doped layer on the threshold voltage fluctuations.…”

Section: Fluctuation-resistant Architecturesmentioning

confidence: 99%

See 1 more Smart Citation

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

Asenov

Saini

1999

IEEE Trans. Electron Devices

153

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Section: Fluctuation-resistant Architecturesmentioning

confidence: 99%

“…The introduction of a low doped region in the channel, however, makes the corresponding devices more susceptible to short channel effects. This drawback can be compensated to some extent by introducing a delta doping below the epitaxial channel [19].…”

mentioning

confidence: 99%

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

Asenov

Saini

1999

IEEE Trans. Electron Devices

153

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“…Since the i)-doping is not used in DSSB Pi-OX MOSFET the reactive ion etching of Si and steps suggested in [13] are not required in this structure. After the creation of i) doped structure gate oxide and gate electrode is patterned using conventional methods.…”

Section: Introductionmentioning

confidence: 98%

“…In order to create i)-doping in the selective BOX window the method suggested in [13] is used to create the i)-doped structure. Since the i)-doping is not used in DSSB Pi-OX MOSFET the reactive ion etching of Si and steps suggested in [13] are not required in this structure.…”

Section: Introductionmentioning

confidence: 99%

A novel partially insulated Schottky source/drain MOSFET: Short channel and self heating effects

Patil

Qureshi

2010

2010 International Conference on Microelectronics

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In this paper short channel and self heating effects in dopant segregated Schottky barrier (DSSB) silicon-on insulator (SOl) MOSFET are investigated in sub-30 nm regime using two dimensional MEDICI simulator. In order to suppress these effects novel structures having dopant segregated Schottky sourceldrain (SID) with buried oxide (BOX) only under SID (DSSB Pi-OX) and DSSB Pi-OX with p-type delta doping in the oxide window formed under channel (DSSB Pi-OX-o) have been proposed. The DSSB Pi-OX MOSFET is found better for reducing self heating effect but has worst short channel effects (SCE). On the other hand, DSSB Pi-OX-o MOSFET not only reduces the self heating effect but also has SCE suppression better than DSSB SOl MOSFET. The extracted parasitic capacitances and SID series resistance of DSSB SOl MOSFET and DSSB Pi-OX-o MOSFET are found comparable to DSSB SOl MOSFET which shows that the performance advantages of DSSB SOl MOSFET are not affected with the proposed modification. The detailed fabrication flow of these novel devices is also proposed. Index Terms-dopant segregated Schottky barrier SOl MOSFET; self heating effect; short channel effects; partially insulated source/drain;

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“…These architectures have additional benefits in terms of optimal threshold voltage control and improved mobility [19][20][21][22]. The undoped epitaxial layer thickness is restricted to approximately one-fifth of the effective channel length, due to short channel effects.…”

Section: Fluctuation Resistant Mosfet Architecturesmentioning

confidence: 99%

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Asenov

Slavcheva

Brown

et al. 2000

Superlattices and Microstructures

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A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.

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A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

Cited by 62 publications

References 4 publications

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

A novel partially insulated Schottky source/drain MOSFET: Short channel and self heating effects

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

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