A 0.18 μm foundry RF CMOS technology with 70 GHz F/sub t/ for single chip system solutions

0.13 ?m Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

“…As shown in Fig.1, fT of 115GHz and tax of 80GHz are obtained by extrapolation to unit gain, i.e. OdB which remarks enhancement of around 65% (fT) and 40% (fmax) over previous generation [5]. In addition, Quax as high as 23/19 dB achieved corresponding to 2.4/5.8GHz offers around 5dB improvement over 0.18tm node's devices and is more suitable for wireless LAN application.…”

“…Attributed to the aggressive CMOS device scaling, the gate delay has been pushed below 14ps at 130nm logic technology node and will be approaching 10ps at 90nm node. The fast gate delay generally represents high fT (unit current gain cut-off frequency) and we will report in this paper the superior RF CMOS device of 115GHz f and 80GHz fmax realized by 0.13tm high performance logic process with aggressive device scaling, that's enhancement of around 65% (fT) and 40% (fmax) over the 0.18pm node previously published [5]. For RF applications, we'd like to emphasize more on RF power and noise performance measured by Gmax (maximum power gain), fmax (unity-power-gain cut-off frequency), NFmin (minimum noise figure), PjdB (RF output power at 1 dB compression), and PAE (power added efficiency) than the current gain (H21) measured by fT.…”