“…Near and sub-threshold SRAM is effective to reduce power dissipation, so they are extensively used in low power applications [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15]. 8T SRAM cell has taken the place of 6T cell to be a popular choice for the near and sub-threshold operation [2,3,4,5,6,7]. Unfortunately, 8T cell has additional leakage path compared to 6T cell, thus increasing the cell leakage [8].…”