A 0.5-W complementary AlGaAs-GaAs HBT push-pull amplifier at 10 GHz

Tserng, H.Q.; Hill, D.; Kim, T.S.

doi:10.1109/75.196037

Cited by 14 publications

(2 citation statements)

References 8 publications

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“…The push-pull amplifier is a basic building block for differential PA. But the research on push-pull amplifier with a complementary P-n-p/N-p-n InGaP/GaAs HBT pair appears being ignored due to the complexity in fabrication [3,4,5,6]. A high-efficiency class-AB pseudo-push-pull amplifier designed with N-p-n HBTs alone can be realized by using a 180-degree phase splitters (or baluns) [7,8].…”

Section: Introductionmentioning

confidence: 99%

A wide-band monolithic differential power amplifier

Ting

Zhang

Gao³

et al. 2017

IEICE Electron. Express

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A differential PA (power amplifier) with a novel structure is introduced in this paper. This PA is constructed with single ended input and balanced output. It is fabricated in 2 µm InGaP/GaAs HBT technology. The small-signal bandwidth of this PA covers from 1.5 GHz to 2.7 GHz. 34 dBm P −1dB (1 dB gain-compression power) and 45% PAE (power added efficiency) is achieved at 2.1 GHz. Moreover, the quiescent power dissipation is 400 mW with 12 V supply.

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Section: Introductionmentioning

confidence: 99%

A wide-band monolithic differential power amplifier

Ting

Zhang

Gao³

et al. 2017

IEICE Electron. Express

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“…There have also been a number of reports of Pnp HBTs in the AlGaAs/GaAs material system with similar performance results. [4][5][6][7][8] However, there have been few theoretical studies of Pnp HBTs. [9][10][11][12][13][14][15][16][17] In particular, the role of hole thermionic emission, tunneling and space charge region drift diffusion at the emitter-base heterojunction have not been fully investigated.…”

Section: Introductionmentioning

confidence: 99%

Hole transport and quasi-Fermi level splitting at the emitter-base junction in Pnp heterojunction bipolar transistors

Datta

Roenker

Cahay

1999

Journal of Applied Physics

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Hole transport across the emitter-base heterojunction in Pnp heterojunction bipolar transistors is considered and the amount of hole quasi-Fermi level splitting at the interface is analyzed. Hole injection at the emitter is shown to significantly limit the emitter current to a level more than an order of magnitude less than that predicted by the hole-base diffusion model. Due to the low hole mobility, hole drift diffusion across the emitter-base space charge region is shown to be of comparable importance to thermionic-tunneling emission in controlling hole injection into the base.

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