Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors

Datta, Suman; Roenker, K.P.; Cahay, M.; Stanchina, W.E.

doi:10.1016/s0038-1101(98)00237-8

Cited by 15 publications

(4 citation statements)

References 35 publications

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“…Fig. 14 shows the difference in resistivities of n-InP and p-InP as functions of doping, calculated from mobility data in [22]. For a WAP, it was also shown that undercut etching InGaAs (in the detector region) reduces detector leakage current.…”

Section: Discussion and Summarymentioning

confidence: 99%

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Pasquariello

Bjorlin

Lasaosa

et al. 2006

J. Lightwave Technol.

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Section: Discussion and Summarymentioning

confidence: 99%

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Pasquariello

Bjorlin

Lasaosa

et al. 2006

J. Lightwave Technol.

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“…By assuming an emitter injection efficiency close to unity ͑which is the case for most HBT technologies͒, ␤ mostly depends on the base transport factor and can be approximated by 1/͓cosh(W B /L B )Ϫ1͔ where L B is the minority carrier diffusion length in the base. 15 This empirical calculation shows in Fig. 3 that the L B value from the best InGaAsN material slightly benefits from the in situ annealing approach but still suffers when compared to a GaAs base control layer, causing limited gain.…”

Section: Observation Of Enhanced Transport In Carbon-doped Ingaasn Afmentioning

confidence: 94%

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

Monier

Baca

Sun

et al. 2002

Applied Physics Letters

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The incorporation of a low band gap carbon-doped InGaAsN material into a standard GaAs heterojunction bipolar transistor (HBT) has great potential to achieve higher operating efficiency at lower bias conditions. In order to improve the performance of the initial as-grown InGaAsN-based HBTs (with 1% N and 3% In for an energy band gap EG of 1.2 eV), the effects of different thermal treatments on material quality and their impact on dc and rf characteristics on small-area devices are examined in this letter. A degradation of the base transport is observed after a postgrowth anneal associated with lower current gain β and degraded microwave properties. An in situ anneal approach under inert ambient conducted following the emitter growth, increases the active doping level (with a base sheet resistance RSH three times lower than the as-grown structure and demonstrates suitable high frequency performance for a device with such a large amount of nitrogen in the base.

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“…10 -331 max = 331 min = 75 Nref = 7.7 × 10 18 cm -3 z = 1.37 Electron Lifetime 26,47,50,[53][54][55][56][57] (sec)…”

Section: Introductionmentioning

confidence: 99%

“…0.05 × 10 -9 -55 × 10 -6 o = 16 × 10 -9 = 0.73 ND = 1 × 10 17 cm -3 Hole Lifetime 26,47,50,[53][54][55][56][57] ℎ (sec) 0.1 × 10 -9 -90 × 10 -6 o = 40 × 10 -9 =1.2 NA = 1 × 10 17 cm -3 Auger recombination 26,47,49,53,55 Using the identified material parameters in Table 2 Table 3 shows the range of the design parameters for the In0.53Ga0.47As TPV cell. Individually, each variable was manipulated while the rest of the design parameters in Fig.…”

Section: Introductionmentioning

confidence: 99%

Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm

Gamel

Ker

Lee

et al. 2020

Preprint

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The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as the emitter thickness, while the effects of the variation in other design variables are assumed to be negligible. The reported efficiencies of In0.53Ga0.47As TPV cell mostly remain < 15%. Therefore, this work develops a multi-variable or multi-dimensional optimization of In0.53Ga0.47As TPV cell using the real coded genetic algorithm (RCGA) under various radiation temperatures. RCGA was developed using Visual Basic and it was hybridized with Silvaco TCAD for the electrical characteristics simulation. Under radiation temperatures from 800 K to 2000 K, the optimized In0.53Ga0.47As TPV cell efficiency increases by an average percentage of 11.86% (from 8.5% to 20.35%) as compared to the non-optimized structure. It was found that the incorporation of a thicker base layer with the back-barrier layers enhances the separation of charge carriers and increases the collection of photo-generated carriers near the band-edge, producing an optimum output power of 0.55 W/cm2 (cell efficiency of 22.06%, without antireflection coating) at 1400 K radiation spectrum. The results of this work demonstrate the great potential to generate electricity sustainably from industrial waste heat and the multi-dimensional optimization methodology can be adopted to optimize semiconductor devices, such as solar cell, TPV cell and photodetectors.

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Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors

Cited by 15 publications

References 35 publications

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm

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