2017
DOI: 10.1109/jssc.2016.2602221
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A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution

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Cited by 51 publications
(22 citation statements)
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“…Even in the case of multilayers' stacking, such as 33 (32 + 1) layers, the stacked DRAM device yield of close to 100% can be expected with a penalty of just one extra layer addition. If the device design provides smaller granularity of bank configuration (means more banks), such as 64 banks or more, the productivity should be better [9].…”
Section: B Case Where Single-layer Die Yield Is Greater Than or Equamentioning
confidence: 99%
“…Even in the case of multilayers' stacking, such as 33 (32 + 1) layers, the stacked DRAM device yield of close to 100% can be expected with a penalty of just one extra layer addition. If the device design provides smaller granularity of bank configuration (means more banks), such as 64 banks or more, the productivity should be better [9].…”
Section: B Case Where Single-layer Die Yield Is Greater Than or Equamentioning
confidence: 99%
“…High bandwidth memories like HBM2 [27] help in alleviating the memory bottleneck of memory bounded applications. We propose to use the 3D-stacked HBM2 memory for such workloads, attaining a bandwidth of 307.2 GB/s.…”
Section: High Bandwidth Memoriesmentioning
confidence: 99%
“…This leads to a performance benefit of 50%, 10.5% and 14% for Bowtie2, BWA-MEM and HISAT2, respectively, with corresponding energy savings of up to 53%, 18% and 26%, respectively. This is due to the fact that the three NGS applications are memory bounded and, therefore, benefit from high memory BW of up to 307.2 GB/s [27], which is provided by HBM2. We also observe that the performance and energy benefits of using HBM2 are more for OoO cores compared to in-order, as OoO cores can exploit more BW and therefore, take more advantage of HBM2.…”
Section: Number Of Coresmentioning
confidence: 99%
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“…As a second case study to demonstrate gem5-X architectural extension capabilities, we implement a High Bandwidth Memory (HBM) based on 3D die stacking technology. We implement the HBM2 memory model as proposed by Sohn et al (2017), which has bandwidth of 307 GB/s in comparison to 25.2 GB/s for DDR4 architectures described by Hsueh et al (2014) to alleviate the memory bottlenecks generated due to the concurrent run of multiple memory bounded applications.…”
Section: Introductionmentioning
confidence: 99%