A 1.8-GHz 2-Watt Fully Integrated CMOS Push-Pull Parallel-Combined Power Amplifier Design

Lee, O.; Yang, Kuan; An, Kyungwon; Kim, Younsuk; Kim, Hyungwook; Chang, Jae Joon; Woo, Wangmyong; Lee, Chang-Ho; Laskar, J.

doi:10.1109/rfic.2007.380918

Cited by 15 publications

(4 citation statements)

References 9 publications

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“…From Table , the proposed push‐pull PA operated at a higher frequency by using a smaller‐sized multilayer center‐tapped transformer than the PA in Ref. .…”

Section: Simulation and Measurement Resultsmentioning

confidence: 99%

High‐efficiency CMOS push‐pull power amplifier with multilayer center‐tapped transformer

Nakamura

Kanemoto

Sadakiyo

et al. 2016

IEEJ Transactions Elec Engng

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This paper describes the design of a push-pull power amplifier (PA) with a center-tapped transformer for transmitter applications on the 5.2-GHz band using 0.18μm CMOS technology. The type of the proposed PA is based on a double-ended push-pull (DEPP) configuration. DEPP has a simple construction with only transistors and transformers. The PA has reverse-phased cascode-connected transistors. The proposed transformer has a multilayer structure and was designed using electromagnetic field simulation. To achieve high power added efficiency (PAE), we assumed the optimized output impedance technique with a tunable impedance antenna. The PA has 13.2 dB linearity gain, 14.9 dBm 1-dB compression point (P1dB), and 27.4% maximum PAE.

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“…From Table , the proposed push‐pull PA operated at a higher frequency by using a smaller‐sized multilayer center‐tapped transformer than the PA in Ref. .…”

Section: Simulation and Measurement Resultsmentioning

confidence: 99%

High‐efficiency CMOS push‐pull power amplifier with multilayer center‐tapped transformer

Nakamura

Kanemoto

Sadakiyo

et al. 2016

IEEJ Transactions Elec Engng

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“…However, the number of turns with this approach becomes larger on the secondary side, increasing the area and lowering the self-resonance frequency. Other examples can be found in [122], [123].…”

Section: Power Combination Using On-chip Transformersmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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“…Lower power gain, worse linearity, and poorer PAE by nature are the main performance issues associated with silicon-based technologies, especially silicon-CMOS. In addition, the low breakdown voltage is their main drawback for PA applications, and some unique PA architectures need to be applied to resolve this issue [6], [7]. This may lead to circuit design complexity and higher cost.…”

Section: Semiconductor Technologies For Rf Integrated Circuit Handsetmentioning

confidence: 99%

Evolution of RFIC Handset PAs

et al. 2010

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A 1.8-GHz 2-Watt Fully Integrated CMOS Push-Pull Parallel-Combined Power Amplifier Design

Cited by 15 publications

References 9 publications

High‐efficiency CMOS push‐pull power amplifier with multilayer center‐tapped transformer

High‐efficiency CMOS push‐pull power amplifier with multilayer center‐tapped transformer

A Review of Watt-Level CMOS RF Power Amplifiers

Evolution of RFIC Handset PAs

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