1990 37th IEEE International Conference on Solid-State Circuits 1990
DOI: 10.1109/isscc.1990.110160
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A 1 mu A retention 4 Mb SRAM with a thin-film-transistor load cell

Abstract: To move High-Performance Computing (HPC) closer to forward operating environments and missions, the Army Research Laboratory is developing approaches using hybrid, asymmetric core computing. By blending capabilities found in Graphics Processing Units (GPUs) and traditional von Neumann multicore Central Processing Units (CPUs), approaches are being developed and optimized to provide at or near real-time processing speeds for research project applications. Algorithms are designed to partition work to resources b… Show more

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“…We can reduce the occupied area if the 2T share the source or drain region in common. In static RAMs, thin-film transistors (TFTs) of polycrystalline Si are stacked over MOSFETs fabricated on a Si substrate to reduce the area per one memory cell [25]- [27]. If TFTs for W-MOSFETs are stacked over R-MOSFETs in integrated IF-FET, the packing density can be much increased.…”
Section: V and V −mentioning
confidence: 99%
“…We can reduce the occupied area if the 2T share the source or drain region in common. In static RAMs, thin-film transistors (TFTs) of polycrystalline Si are stacked over MOSFETs fabricated on a Si substrate to reduce the area per one memory cell [25]- [27]. If TFTs for W-MOSFETs are stacked over R-MOSFETs in integrated IF-FET, the packing density can be much increased.…”
Section: V and V −mentioning
confidence: 99%