A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

Scheuerlein, R.E.; Gallagher, W. J.; Parkin, S. S. P.; Lee, A.; Ray, Sam; Robertazzi, R. P.; Reohr, W.

doi:10.1109/isscc.2000.839717

Cited by 68 publications

(31 citation statements)

References 5 publications

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“…Other alternatives are ferroelectric random access memories (FeRAM) based on ferroelectric materials and phase change based Ovonyx unified memory (OUM). The most important characteristics of all these [1] and more recently using magnetic tunnel junctions (MTJ) [2,3]. This paper reviews the principles in MTJ based MRAMs and highlights the latest developments and new approaches being investigated.…”

Section: Introductionmentioning

confidence: 99%

Non-volatile magnetic random access memories (MRAM)

Sousa

Prejbeanu

2005

Comptes Rendus. Physique

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Section: Introductionmentioning

confidence: 99%

Non-volatile magnetic random access memories (MRAM)

Sousa

Prejbeanu

2005

Comptes Rendus. Physique

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“…Magnetic random access memory (MRAM) based on magnetic tunnel junction (MTJ) has attracted a lot of recent interests due to its nonvolatile property, fast speed, and high read and write endurance. 1,2 Writing the magnetic bits in MRAM has been challenging, which has been traditionally achieved by the Oersted fields produced by large electric currents, 3 or more recently with the spin torque effect by passing a spin polarized current through the magnetic film. 4,5 Both methods need large current or current density, leading to high energy consumption during the writing process.…”

mentioning

confidence: 99%

Voltage impulse induced bistable magnetization switching in multiferroic heterostructures

Nan

Zhou

Lou

et al. 2012

Applied Physics Letters

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We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.

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“…Motorola [38] and IBM [39] were the two main industrial players to rapidly recognize the potential of MTJ-based MRAM architectures. In the early 2000s, both were developing an MRAM architecture based on 1MTJ-1FET per cell and were exploiting the Stoner-Wohlfarth (SW) write scheme for the memory encoding.…”

Section: Mram Based On Field-induced Magnetization Switchingmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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Spintronics (or spin electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e., its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by nonmagnetic layers through which the spin-polarized electrons are transmitted. It is considered that spintronics started in 1988 with the discovery of the giant magnetoresistance (GMR) effect, which corresponds to a large variation of the resistance of a magnetic multilayer under the application of a magnetic field [1]. Shortly later, spin valve structures were invented [2]. The latter exhibit GMR at low fields and thereby constitute very sensitive magnetic field sensors. In 1998, they were introduced as sensing elements in readback heads in computer disk drives. More than one billion of such read heads are produced each year. Besides the usual applications of hard disk drives in desktops,

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A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

Cited by 68 publications

References 5 publications

Non-volatile magnetic random access memories (MRAM)

Non-volatile magnetic random access memories (MRAM)

Voltage impulse induced bistable magnetization switching in multiferroic heterostructures

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

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