A 108-Gbps, 162-mW Cherry-Hooper Transimpedance Amplifier

Valenzuela, Luis A.; Maharry, Aaron; Andrade, Hector; Schow, Clint L.; Buckwalter, James F.

doi:10.1109/bcicts48439.2020.9392928

Cited by 11 publications

(3 citation statements)

References 6 publications

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“…High frequency model of emitter follower Input impedance Z in of the emitter follower based on Equation (12) and β 0 = r π g m can be expressed as [29]:…”

Section: R Rmentioning

confidence: 99%

“…In the field of amplifiers, there are not many references relating to amplifiers designed directly for UWB sensor systems operating in wideband frequencies up to 13 GHz which are designed using low-cost 0.35 µm SiGe BiCMOS technology. There are many structures for telecommunication and optical networks [4][5][6][7][8][9][10][11][12], but most of the time these amplifiers are designed with expensive semiconductor technologies, and even though they are wideband, by definition, their bandwidth does not meet the requirements for UWB sensor systems based on the M-sequence. Applications of UWB sensor systems based on the M-sequence that have been developed include, for example, ground penetrating radars [13,14], locating and searching for persons behind obstacles and walls [15], locating general objects or use of robots [16], in the field of non-invasive diagnostics and condition detection in medicine [17], and material reflectometry [18,19].…”

Section: Introductionmentioning

confidence: 99%

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Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications

Sokol,

Galajda,

Jurik

2024

Sensors

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Amplification of wideband high-frequency and microwave signals is a fundamental element within every high-frequency circuit and device. Ultra-wideband (UWB) sensor applications use circuits designed for their specific application. The article presents the analysis, design, and implementation of ultra-wideband differential amplifiers for M-sequence-based UWB applications. The designed differential amplifiers are based on the Cherry–Hooper structure and are implemented in a low-cost 0.35 µm SiGe BiCMOS semiconductor process. The article presents an analysis and realization of several designs focused on different modifications of the Cherry–Hooper amplifier structure. The proposed amplifier modifications are focused on achieving the best result in one main parameter’s performance. Amplifier designs modified by capacitive peaking to achieve the largest bandwidth, amplifiers with the lowest possible noise figure, and designs focused on achieving the highest common mode rejection ratio (CMRR) are described. The layout of the differential amplifiers was created and the chip was manufactured and wire-bonded to the QFN package. For evaluation purposes, a high-frequency PCB board was designed. Schematic simulations, post-layout simulations, and measurements of the individual parameters of the designed amplifiers were performed. The designed and fabricated ultra-wideband differential amplifiers have the following parameters: a supply current of 100–160 mA at −3.3 V or 3.3 V, bandwidth from 6 to 12 GHz, gain (at 1 GHz) from 12 to 16 dB, noise figure from 7 to 13 dB, and a common mode rejection ratio of up to 70 dB.

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“…High frequency model of emitter follower Input impedance Z in of the emitter follower based on Equation (12) and β 0 = r π g m can be expressed as [29]:…”

Section: R Rmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications

Sokol,

Galajda,

Jurik

2024

Sensors

View full text Add to dashboard Cite

show abstract

“…Silicon germanium (SiGe) heterojunction bipolar transistors (HBT) integrated along with a high-density CMOS provide such an all-silicon monolithic solution. SiGe BiCMOS is the technology of choice for many current implementations of wide-bandwidth transimpedance amplifiers (TIA) (2) and high frequency driver amplifiers (3) that comprise the front-end of optical transceivers. The use of D-band carrier frequencies is being explored for 6G cellular communications (4).…”

Section: Introductionmentioning

confidence: 99%