A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

Kobayashi, K.W.; Oki, A.K.; Tran, L.T.; Cowles, J.; Gutierrez-Aitken, A.; Yamada, Fumio; Block, T.; Streit, D.C.

doi:10.1109/4.782080

Cited by 115 publications

(19 citation statements)

References 9 publications

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“…3, which indicates the phase noise to be -88 dBc/Hz at 1-MHz offset. This is not only the best phase noise result among the previously reported W-band HEMT VCOs [1]- [5], but also rivals those of the HBTbased VCOs [6]- [7]. …”

Section: Measured Resultssupporting

confidence: 53%

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An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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-A W-band voltage control oscillator (VCO) using 0.1-m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2 GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.

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Section: Measured Resultssupporting

confidence: 53%

“…HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1/f noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”

Section: Introductionmentioning

confidence: 99%

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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“…However, R S does not scale linearly as f osc increases because it includes the parasitic gate and source resistances of the transistor, both of which increase as the total gate width is reduced. As a result, when a VCO design is scaled to a very high frequency, a relatively larger transistor is required to maintain oscillation than that given by (11). Furthermore, it is critical to scale the entire VCO layout, i.e.…”

Section: Frequency Scalingmentioning

confidence: 99%

Frequency Scaling and Topology Comparison of Millimeter-wave CMOS VCOs

Tang

Leung

Tieu

et al. 2006

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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“…In Ref. 11, a method of obtaining high output power by power-combining the second-harmonic output powers in push-push configuration is suggested. However, because the push-push type of oscillator must oscillate with half of the output frequency, it requires more than double the area against our proposed fundamentalwave power combining oscillator to achieve almost the same characteristics.…”

Section: Introductionmentioning

confidence: 99%

A 100‐GHz‐band quadruple power combined monolithic HBT oscillator

Uchida

Matsuura

Yakihara

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYIn this paper we discuss a design methodology we used to fabricate a 100-GHz-band monolithic oscillator that power-combines four heterojunction bipolar transistor (HBT) based suboscillators, and the experimental results we obtained. We analyzed the oscillation condition by considering the loop gain when feedback is present, and adjusted the design parameters so as to combine the output powers of four suboscillators by making them oscillate in phase. The active elements we used for the suboscillators were InGaP/InGaAs HBTs with emitter dimensions 1.0 µm × 5.0 µm, for which f T and f max were 190 and 240 GHz, respectively. The signal frequency of the completed oscillator was 97. 4 GHz, its output power +3.0 dBm. The biases on the HBTs were I C = 10 mA and V CE = 2.0 V. In order to discuss the power combining efficiency, we fabricated test oscillators with only one and dual power combined oscillators, which were investigated under the same measurement conditions. These circuits oscillated at 100.5 and 100.4 GHz, respectively, with -3.2 and -0.4 dBm output powers. These results confirm that the output power increases with the number of suboscillators. As far as we know, our article is the first to report a monolithic oscillator that power-combines four suboscillators.

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A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

Cited by 115 publications

References 9 publications

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Frequency Scaling and Topology Comparison of Millimeter-wave CMOS VCOs

A 100‐GHz‐band quadruple power combined monolithic HBT oscillator

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