2011 IEEE International Solid-State Circuits Conference 2011
DOI: 10.1109/isscc.2011.5746323
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A 120GHz 10Gb/s phase-modulating transmitter in 65nm LP CMOS

Abstract: This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter which achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi gigabit per second communication which provides an answer to the ever increasing demand for higher data rates in wireless systems. However, wideband modulation of a 120GHz signal in 65nm LP CMOS is a challenge. To achieve a high data rate at these high frequencies, a straightforward and high speed phase m… Show more

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Cited by 41 publications
(8 citation statements)
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“…The power that comes out of the metal waveguide is measured with an Erickson PM4 power meter. Unless stated otherwise, this level is set to 0 dBm, a value that is certainly feasible to be generated with modern CMOS processes [2], [3]. To demonstrate multilevel ASK demodulation, the AWG was used to generate a four level ASK signal.…”
Section: B Modulated Signals and Complete Link Measurementsmentioning
confidence: 99%
“…The power that comes out of the metal waveguide is measured with an Erickson PM4 power meter. Unless stated otherwise, this level is set to 0 dBm, a value that is certainly feasible to be generated with modern CMOS processes [2], [3]. To demonstrate multilevel ASK demodulation, the AWG was used to generate a four level ASK signal.…”
Section: B Modulated Signals and Complete Link Measurementsmentioning
confidence: 99%
“…4: Power amplifier trends in integrated transmitters implemented using compound (III-V) and silicon-based (SiGe HBT and CMOS) devices. Data collected from [17], [18], [19], [20] of carrier/modulation frequency. SiGe HBTs are more suitable for WiNoCs due to their power levels and material engineering techniques on silicon bipolar transistors compared to high performance III-V HEMTs with poor integration potential.…”
Section: Trends Of Wireless Transceiversmentioning
confidence: 99%
“…Design of RF front-ends at mm-wave carriers (100 GHz) and beyond is a relatively new topic with most emphasis placed on the circuit design aspects. One major challenge of mm-wave front-ends operating at frequencies beyond 100 GHz is that the stage gain for power amplifiers is quite low [1,2,3], typically only 3-6 dB of gain per stage. This low available gain makes the front-end extremely sensitive to the effects of process variation as a small change in the CMOS device parameters may drastically reduce the front-end performance.…”
Section: Introductionmentioning
confidence: 99%