ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.
DOI: 10.1109/isscc.2005.1493864
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A 125MHz burst-mode flexible readwhile-write 256Mbit 2b/c 1.8V NOR flash memory

Abstract: Multilevel technology flash memory devices have been introduced [1] to obtain the low silicon cost and the high density required by a wide range of applications. Read access time and burst frequency have been improved and dual functionality has been obtained [2,3], in line with the requests of the most demanding wireless applications. The 2b/cell 256Mb memory in this paper features a 125MHz read burst speed and flexible read-whilewrite through the introduction of an voltage-ramp reading concept.The reading con… Show more

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