A 128<formula formulatype="inline"><tex Notation="TeX">$\times$</tex> </formula>96 Pixel CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Junctions in Reach Through

Abstract

Visible light from silicon junctions under avalanche breakdown can be used to create microdisplay systems with integrated light sources. Junctions available in standard CMOS usually breaks down at much larger voltages than the typical operating voltage for integrated circuitry. It is possible to reduce the operating voltage of by making use of techniques which changes the electric field profile in light sources based on hot carrier electroluminescence such as electric field reach through between two highly doped implant regions. This work successfully demonstrates the possibility of tailoring the operating voltage and quantifying the optical performance in an integrated microdisplay consisting of a 128 by 96 pixel array based on light sources in standard CMOS. Based on the approach followed it becomes possible to integrate light sources in such a manner that it can coexist and interact with other on-chip analog and digital circuitry. The requirements for architectural features of a microdisplay in standard CMOS is discussed and it is shown to be possible to create large scale integrated circuits containing integrated light sources in standard CMOS without the need for postprocessing or additional back end modifications.

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

“…4 Aside from telecom, the implementation of low-cost integrable silicon-based light sources would also benefit other growing niche markets such as the microdisplay industry or the sensing technologies. 5,6,7,8 Up to now, several approaches have been employed to develop Si-based light sources. Among them, the most remarkable are the ones that introduce intraband dislocation loops to enhance the radiative recombination of excitons at specific trapping sites in p-n junctions or the nanostructuring of Si in the form of silicon nanocrystals (Si-ncs) to benefit from their superior optical properties compared to bulk silicon.…”

Prospects of efficient band-to-band emission in silicon LEDs

“…A further analysis of the results is underway 30 . It is worth mentioning that the research groups of Snyman and Du Plessis follow a similar track of standard-CMOS based opto-electronic systems, be it that they focus on avalanche-based emission to date 31,32 . The feasibility of optocoupling using a forward-biased silicon LED was originally challenged by Kramer et al 33 but unambiguously demonstrated by Kawakami and Okamoto 34 with discrete components.…”

Temperature characteristics of hot electron electroluminescence in silicon

“…CMOS based light sources have been shown to exhibit illumination levels that can be utilized in micro displays [1][2][3]. In these micro display applications the wide operational temperature range of the CMOS based avalanche electroluminescent micro display devices is cited as a distinct advantage compared to the well-established LCD and OLED technologies.…”