A 19.0% efficiency achieved in CuOx-based inverted CH3NH3PbI3−xClx solar cells by an effective Cl doping method

Rao, Haixia; Ye, Senyun; Sun, Weihai; Yan, Weibo; Li, Yunlong; Peng, Haitao; Liu, Zhiwei; Bian, Zuqiang; Li, Yongfang; Huang, Chunhui

doi:10.1016/j.nanoen.2016.06.044

Cited by 236 publications

(141 citation statements)

References 40 publications

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“…[41] In the PSCs with inverted device structure, pure phase Cu 2 O and CuO can act as HTMs and showed PCEs of 12.2% [19] and 13.4%, [19] respectively. [21] Copper sulfide (Cu x S, 1 ≤ x ≤ 2) has been found to form p-type transparent films and show beneficial electrical and optical properties. The relative ratio of the two phases inside (Figure 4c).…”

Section: Dopant-free Ic-htmmentioning

confidence: 99%

“…In addition, Jung et al used combustion chemistry to prepare Cu-doped NiO x (Cu:NiO x ) as HTM for thin-film PSCs. [21] Copyright 2016, Elsevier. [27] Huckaba et al applied the vastly abundant mineral iron pyrite (FeS 2 ) and titanium sulfide (TiS 2 ) as HTM in PSCs, respectively, and achieved PCEs of 11.2 % and 13.54% severally with n-i-p configuration.…”

Section: Dopant-free Ic-htmmentioning

confidence: 99%

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Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Zhou

Wen

Gao

2018

Advanced Energy Materials

252

217

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years, the demands for reducing the fabrication costs and the energy payback time of photovoltaic devices led to the invention of emerging third-generation PV technologies, such as dye-sensitized solar cells (DSSCs), organic photovoltaic (OPV), quantum dots solar cells, and the latest perovskite solar cells (PSCs). Among them, PSC is the only technology that combines both merits of low processing energy cost and high power conversion efficiency (PCE), which makes it possible to replace the silicon-based PV technology.Since the first reports by Bach and Grätzel et al. about the use of 2,2′,7,7′tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) as the hole-transporting material (HTM) in solid-state DSSCs (ssDSSC), spiro-OMeTAD becomes the benchmark of all the new HTMs developed for ssDSSC and PSCs. Contrary to the popular myth, spiro-OMeTAD is not completely amorphous but a semi-crystalline organic p-type semiconductor with a glass transition temperature of 121 °C and a melting point of 246 °C. [1] Its chemical structure is shown in Figure 1a and Grätzel's lab first revealed the crystal structure in 2014 [2] ( Figure 1b). It has a large bandgap of 2.98 eV and yields almost colorless thin films when deposited from solution in organic solvents such as toluene or chlorobenzene. The first oxidation potential of spiro-OMeTAD is found to be approximately −5.1 eV as derived from electrochemical and photoelectron spectroscopy measurements. [3] In the case of the solid-state PSCs reported since 2012, [4,5] the PCE of lab-made devices has increased from 9.7% [6] to above 21% [7] in 2017, owing to the improvement in the perovskite composition and device engineering. However, on account of several desirable properties, (i) favorable glass transition temperature; (ii) reasonable solubility; (iii) proper ionization potential; (iii) low visible light absorption; and (iv) appropriate solid-state morphology, spiro-OMeTAD has remained as the material of choice when high PCEs are demanded. Due to the fact that spiro-OMeTAD suffers from a relatively low conductivity in its pristine form, all the eyecatching PCEs were achieved by adding additives and/or dopants-a standard technique used to tune the electrical properties of both organic and inorganic semiconductors. Typical additives including 4-tert-butylpyridine (TBP) and lithium bis(trifluoromethyl sulfonyl)imide (LiTFSI) were added to the spin-coating formulation of spiro-MeOTAD and Perovskite solar cells have delivered power conversion efficiency beyond 22% in less than seven years, implying the potential for the paradigm shift of lowcost photovoltaics with high efficiency and low embedded energy. Besides the "perovskite fever," the development of new hole transport materials (HTM), especially dopant-free HTMs, is another research hotspot. This is because the currently used HTMs, such as spiro-OMeTAD derivatives, require additional chemical doping process to ensure sufficient conductivity and proper ionic potential level for efficient hole transport and colle...

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Section: Dopant-free Ic-htmmentioning

confidence: 99%

Section: Dopant-free Ic-htmmentioning

confidence: 99%

Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Zhou

Wen

Gao

2018

Advanced Energy Materials

252

217

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“…[184] In this work, PCE values of 13.3% and 12.1% were achieved for p-i-n structured PSCs fabricated using the Cu 2 O and CuO HTMs, respectively. [186] In another study, Yu et al employed ultrathin (5 nm) thermally oxidized Cu 2 O layers as HTMs in PSCs and achieved a PCE of 11% (Figure 14).…”

Section: Cu 2 O and Cuomentioning

confidence: 99%

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Haque

Sheikh

Guan

et al. 2017

Advanced Energy Materials

165

121

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Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide‐bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo‐generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

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“…Inorganic p‐type copper‐based HTMs are potentially attractive candidates because of their high carrier mobility and low‐cost. PVSCs based on Cu 2 O, CuSCN, and CuO x as an inorganic HTM have shown the power conversion efficiency (PCE) of 13.35%, 18%, and 19%, respectively.…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

Shasti

Mortezaali

2019

Physica Status Solidi (a)

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Herein, the application of Cu2O, SrCu2O2, and CuAlO2 as the hole‐transport materials (HTMs) in perovskite solar cells (PVSCs) using solar cell capacitance simulator (SCAPS‐1D) software, is numerically investigated. The effects of various parameters such as the perovskite layer thickness, the defect density of perovskite and interfaces, acceptor density of HTM and valance band offset of HTM/perovskite interface on device performance are studied. According to the simulation outcomes, the SrCu2O2 and CuAlO2 known as p‐type transparent conductive oxide are introduced as promising HTMs for fabrication of highly stable and efficient PVSCs. The Cu2O‐based devices exhibit the low power‐conversion efficiency (PCE) of 17.38% whereas, compared with 2,2′,7,7′‐tetrakis‐(N,N‐di‐4‐methoxyphenylamino)‐9,9′‐spirobifluorene (Spiro‐OMeTAD)‐based devices (PCE = 19.23%), the SrCu2O2 and CuAlO2 based‐devices show an enhanced PCE of 19.67% and 19.82%, respectively, under the hole‐transport layer (HTL) side illumination. This improvement can be attributed to lower light absorption in the HTL for devices based on SrCu2O2 and CuAlO2 than Cu2O due to wider bandgap which is formed.

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A 19.0% efficiency achieved in CuOx-based inverted CH3NH3PbI3−xClx solar cells by an effective Cl doping method

Cited by 236 publications

References 40 publications

Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

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A 19.0% efficiency achieved in CuOx-based inverted CH3NH3PbI3−xClx solar cells by an effective Cl doping method

Cited by 236 publications

References 40 publications

Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Less is More: Dopant‐Free Hole Transporting Materials for High‐Efficiency Perovskite Solar Cells

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Numerical Study of Cu2O, SrCu2O2, and CuAlO2 as Hole‐Transport Materials for Application in Perovskite Solar Cells

Contact Info

Product

Resources

About

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells