A $192\times128$  Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

Henderson, Robert K.; Johnston, Nick; Rocca, Francescopaolo Mattioli Della; Chen, Haochang; Li, David; Hungerford, Graham; Hirsch, Richard H.; McLoskey, David; Yip, Philip; Birch, David J. S.

doi:10.1109/jssc.2019.2905163

Cited by 122 publications

(102 citation statements)

References 19 publications

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“…A device with 252 Â 144 pixels shared 1728 TDCs has recently been developed by Lindner et al 82 Henderson et al have reported a 192 Â 128 SPAD array with TDCs in every pixel. 83 The devices normally produce a data word for every photon, providing spatial and temporal information for the buildup of a photon distribution. Since the data transfer rates are in the range of Gigabits per second, photon rates of hundreds of MHz can be processed, and consequently millisecond acquisition times and correspondingly high image rates can be reached.…”

Section: Wide-¯eld Tcspc-flim With Spad Arraysmentioning

confidence: 99%

“…For example, the array developed by Lindner et al reported ā ll factor of 28%, 82 while Henderson et al quoted ā ll factor of 13%, and increased to 42% by microlenses. 83 The low¯ll factor results from the fact that chip space is needed for the TDCs, and that the SPADs have to be spatially separated to avoid cross-triggering. It can be expected, however, that these parameters will quickly improve.…”

Section: Wide-¯eld Tcspc-flim With Spad Arraysmentioning

confidence: 99%

See 1 more Smart Citation

Fast fluorescence lifetime imaging techniques: A review on challenge and development

Liu

Lin

Becker

et al. 2019

J. Innov. Opt. Health Sci.

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Fluorescence lifetime imaging microscopy (FLIM) is increasingly used in biomedicine, material science, chemistry, and other related research fields, because of its advantages of high specificity and sensitivity in monitoring cellular microenvironments, studying interaction between proteins, metabolic state, screening drugs and analyzing their efficacy, characterizing novel materials, and diagnosing early cancers. Understandably, there is a large interest in obtaining FLIM data within an acquisition time as short as possible. Consequently, there is currently a technology that advances towards faster and faster FLIM recording. However, the maximum speed of a recording technique is only part of the problem. The acquisition time of a FLIM image is a complex function of many factors. These include the photon rate that can be obtained from the sample, the amount of information a technique extracts from the decay functions, the efficiency at which it determines fluorescence decay parameters from the recorded photons, the demands for the accuracy of these parameters, the number of pixels, and the lateral and axial resolutions that are obtained in biological materials. Starting from a discussion of the parameters which determine the acquisition time, this review will describe existing and emerging FLIM techniques and data analysis algorithms, and analyze their performance and recording speed in biological and biomedical applications.

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Section: Wide-¯eld Tcspc-flim With Spad Arraysmentioning

confidence: 99%

Section: Wide-¯eld Tcspc-flim With Spad Arraysmentioning

confidence: 99%

Fast fluorescence lifetime imaging techniques: A review on challenge and development

Liu

Lin

Becker

et al. 2019

J. Innov. Opt. Health Sci.

View full text Add to dashboard Cite

show abstract

“…In addition, many wide SPAD arrays have been developed in the CMOS technology for counting and timing single photons [17]- [20]. However, CMOS SPADs are typically coupled with circuits not designed for fast-gating operation, being not capable of properly detecting photons arriving during (or just after) the gate rising edge.…”

Section: Gating Operationmentioning

confidence: 99%

Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

Conca

Sesta

Buttafava

et al. 2020

IEEE J. Solid-State Circuits

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We present the design and characterization of a large-area, fast-gated, all-digital single-photon detector with programmable active area, internal gate generator, and time-todigital converter (TDC) with a built-in histogram builder circuit, suitable for performing high-sensitivity time-domain nearinfrared spectroscopy (TD-NIRS) measurements when coupled with pulsed laser sources. We used a novel low-power differential sensing technique that optimizes area occupation. The photodetector is a time-gated digital silicon photomultiplier (dSiPM) with an 8.6-mm 2 photosensitive area, 37% fill-factor, and ∼300 ps (20%-80%) gate rising edge, based on low-noise single-photon avalanche diodes (SPADs) and fabricated in 0.35-µm CMOS technology. The built-in TDC with a histogram builder has a least-significant-bit (LSB) of 78 ps and 128 time-bins, and the integrated circuit can be interfaced directly with a low-cost microcontroller with a serial interface for programming and readout. Experimental characterization demonstrated a temporal response as good as 300-ps full-width at half-maximum (FWHM) and a dynamic range >100 dB (thanks to the programmable active area size). This microelectronic detector paves the way for a miniaturized, stand-alone, multi-wavelength TD-NIRS system with an unprecedented level of integration and responsivity, suitable for portable and wearable systems. Index Terms-Digital silicon photomultiplier (dSiPM), fastgated single-photon avalanche diode (SPAD) array, photon counting, time-to-digital converter (TDC), time-domain near-infrared spectroscopy (TD-NIRS). I. INTRODUCTION T IME-DOMAIN near-infrared spectroscopy (TD-NIRS) is a powerful technique for obtaining non-invasive, in vivo measurements of tissue constituents and structure [1]. This can be exploited in many scientific fields, from a clinical Manuscript

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“…Driven by fast-developing CMOS technology, detection of extremely weak light using SPADs has been a growing field in the past two decades [3][4][5][6]. Due to their single-photon sensitivity and excellent timing resolution, SPADs have been used in areas such as fluorescence lifetime imaging microscopy [7][8][9][10], light detection and ranging (LiDAR) [11,12], radiometric temperature measurement [13], and time-gated Raman spectroscopy [14]. Very recently, the strong demand for LiDAR for autonomous driving (AD) or advanced driver assistance system (ADAS) requires high-resolution 3-D images on a targets at distance up to 100-200 m to ensure car safety.…”

Section: Introductionmentioning

confidence: 99%

Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Hsieh

Tsai

Tsui

et al. 2020

Sensors

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Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

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A $192\times128$ Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

Cited by 122 publications

References 19 publications

Fast fluorescence lifetime imaging techniques: A review on challenge and development

Fast fluorescence lifetime imaging techniques: A review on challenge and development

Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

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