A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 m pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 5.64 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps full-width half maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.25 increase the fill-factor to 42 %. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging microscopy (FLIM) results are presented.Index Terms-single photon avalanche diode, CMOS image sensor, fluorescence lifetime imaging microscopy. laser ranging.

A 256 x 256 single photon avalanche diode (SPAD) sensor integrated in a 3D-stacked 90nm 1P4M/40nm 1P8M process is reported for flash light detection and ranging (LIDAR) or high speed direct time of flight (ToF) 3D imaging. The sensor bottom tier is composed of a 64x64 matrix of 36.72 m pitch modular photon processing units which operate from shared 4x4 SPADs at 9.18 m pitch and 51% fill-factor. A 16 x 14-bit counter array integrates photon counts or events to compress data to 31.4 Mbps at 30 fps readout over 8 I/O operating at 100 MHz. The pixel-parallel multi-event TDC approach employs a programmable internal or external clock for 0.56 ns to 560 ns time bin resolution. In conjunction with a perpixel correlator, the power is reduced to less than 100 mW in practical daylight ranging scenarios. Examples of ranging and high speed 3D TOF applications are given. Index Terms-3-D imaging, CMOS, direct time of flight (dTOF), histogramming, image sensor, light detection and ranging (LiDAR), single photon avalanche diodes (SPADs), time-to-digital converter (TDC), TDC sharing architecture, TOF.

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A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 µm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented. I.

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