A 2.4-GHz silicon bipolar oscillator with integrated resonator

Soyuer, M.; Jenkins, K.A.; Burghartz, Joachim N.; Ainspan, H.; Canora, F.J.; Ponnapalli, S.; Ewen, J.F.; Pence, W.E.

doi:10.1109/4.488006

Cited by 38 publications

(5 citation statements)

References 5 publications

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“…GaAs circuits, which incorporate a lot of planar inductors, have the advantage of gold interconnects to achieve low series resistance. In silicon, most designers use very wide metal turns and several routing levels in a multilayer process to obtain a low series resistance [17], [18]. However, we will show in the next section that due to high-frequency magnetic field effects (such as the well-known skin effect), this is not necessarily the best solution.…”

Section: Silicon Integrated Inductorsmentioning

confidence: 99%

A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors

Craninckx

Steyaert

1997

IEEE J. Solid-State Circuits

425

155

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A completely integrated 1.8-GHz low-phase-noise voltage-controlled oscillator (VCO) has been realized in a standard silicon digital CMOS process. The design relies heavily on the integrated spiral inductors which have been realized with only two metal layers and without etching. The effects of high-frequency magnetic fields and losses in the heavily doped substrate have been simulated and modeled with finite-element analysis. The achieved phase noise is as low as 0116 dBc/Hz at an offset frequency of 600 kHz, at a power consumption of only 6 mW. The VCO is tuned with standard available junction capacitances, resulting in a 250-MHz tuning range.

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Section: Silicon Integrated Inductorsmentioning

confidence: 99%

A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors

Craninckx

Steyaert

1997

IEEE J. Solid-State Circuits

425

155

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“…The subject of VCO design has been treated extensively in the literature. In recent research works the feasibility of integrating VCOs onto silicon has been treated, demonstrating the various problems towards VCO integration [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. In this paper the passive components used in integrated VCOs are presented from the circuit designer's perspective.…”

Section: Introductionmentioning

confidence: 99%

Passive On‐Chip Components for Fully Integrated Silicon RF VCOs

Kyranas

Papananos

2001

Active and Passive Electronic Components

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In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their respective losses R SL and R SC .

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“…In today's RF circuits, inductors of value in the range of nanohenrys are found [5]- [7]. Typical applications of inductors include impedance transformation, inductive degeneration, and frequency-tuned loading.…”

Section: Introductionmentioning

confidence: 99%

Substrate noise coupling through planar spiral inductor

Pun

Yeung

Lau

et al. 1998

IEEE J. Solid-State Circuits

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While previous studies on substrate coupling focused mostly on noise induced through drain-bulk capacitance, substrate coupling from planar spiral inductors at radio frequency (RF) via the oxide capacitance has not been reported. This paper presents the experimental and simulation results of substrate noise induced through planar inductors. Experimental and simulation results reveal that isolation between inductor and noise sensor is less than 030 dB at 1 GHz. Separation by distance reduces coupling by less than 2 dB in most practical cases. Practical examples reveal an obstacle in integrating RF tunedgain amplifier with sensitive RF receiver circuits on the same die. Simulation results indicate that hollow inductors have advantages not only in having a higher self-resonant frequency, but also in reducing substrate noise as compared to conventional inductors. The effectiveness of using broken guard ring in reducing inductor induced substrate noise is also examined.

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A 2.4-GHz silicon bipolar oscillator with integrated resonator

Cited by 38 publications

References 5 publications

A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors

A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors

Passive On‐Chip Components for Fully Integrated Silicon RF VCOs

Substrate noise coupling through planar spiral inductor

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