A 2.5 GHz low noise high linearity LNA/mixer IC in SiGe BiCMOS technology

Wang, D.; Krishnamurthi, K.; Gibson, S. M.; Brunt, J.

doi:10.1109/rfic.2001.935686

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…The high HBTs and stacked inductors are used to simultaneously achieve high linearity and low noise for low power dissipation [4]. Two 3.3-nH stacked inductors (L1-L2) of 110 110 m and two capacitors (C1-C2), each 1 pF, are used to bias and frequency tune the doubler, as shown in Fig.…”

Section: B I/q Modulatormentioning

confidence: 99%

SiGe W-CDMA transmitter for mobile terminal application

Malhi¹,

Larson²,

Wang³

et al. 2003

IEEE J. Solid-State Circuits

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This paper presents the design considerations and experimental results of a transmitter integrated circuit (IC) for wide-band code division multiple access (W-CDMA) mobile terminal application based on a superheterodyne architecture. Implemented by utilizing IBM's 0.5-m SiGe BiCMOS technology, the transmitter IC consumes approximately 270 mW with a 3.0-V power supply. The radio-frequency IC features a third-order output intercept point (OIP3) of +25.0 dBm, a 95-dB dynamic range, and 6.3% error vector magnitude. Index Terms-Automatic gain control, baluns, error vector magnitude, wideband code division multiple access (W-CDMA).

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Section: B I/q Modulatormentioning

confidence: 99%

SiGe W-CDMA transmitter for mobile terminal application

Malhi¹,

Larson²,

Wang³

et al. 2003

IEEE J. Solid-State Circuits

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“…Another possible solution for implementing a single input narrowband LNA followed by a double balanced mixer is to use an on-chip transformer [ 16 ]. However, this solution is also not effective, since many components need to be integrated in order to implement an on-chip transformer, which will result in an increase in chip area.…”

Section: Introductionmentioning

confidence: 99%

Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications

El‐Desouki

Qasim

BenSaleh

et al. 2015

Sensors

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The demand for radio frequency (RF) transceivers operating at 2.4 GHz band has attracted considerable research interest due to the advancement in short range wireless technologies. The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion mixer. There are very few designs that focus on connecting the single-ended output LNA to a double-balanced mixer without the use of on-chip transformer, also known as a balun. The objective of designing such a receiver front-end is to achieve high integration and low power consumption. To meet these requirements, we present the design of fully-integrated 2.4 GHz receiver front-end, consisting of a narrow-band LNA and a double balanced mixer without using a balun. Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. The proposed receiver circuit fabricated using TSMC 0.18 µm CMOS technology operates at 2.4 GHz and produces an output signal at 300 MHz. The fabricated receiver achieves a gain of 16.3 dB and consumes only 6.74 mW operating at 1.5 V, while utilizing 2.08 mm2 of chip area. Measurement results demonstrate the effectiveness and suitability of the proposed receiver for short-range wireless applications, such as in wireless sensor network (WSN).

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BiCMOS Devices and RF Integrated Circuits

Chen,

Yang,

Thomas

2005

Encyclopedia of RF and Microwave Engineering

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In this article, BiCMOS technology development focusing on the most recent achievements of SiGe BiCMOS technology is reviewed first. Several important figures of merit of SiGe device for RFIC designers such as f T , f max , BV CEO (collector–emitter breakdown voltage with an open base), and NF min are studied in detail. We begin with the stringent system requirements of typical modern wireless communication standards. Commercial available technology options for RFIC are compared according to performance, power consumption, level of integration, and cost with special emphasis on GaAs, RF CMOS, and SiGe BiCMOS. Passive devices are also explored with respect to their impacts on RFIC design. The design of key wireless system building blocks is investigated. Recently reported results of SiGe BiCMOS low‐noise amplifiers (LNAs), power amplifiers (PAs) and integrated voltage‐controlled oscillators (VCOs) are reviewed. Finally, future trends of RF integrated system adopting SiGe BiCMOS technology are discussed.

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A 2.5 GHz low noise high linearity LNA/mixer IC in SiGe BiCMOS technology

Cited by 7 publications

References 4 publications

SiGe W-CDMA transmitter for mobile terminal application

SiGe W-CDMA transmitter for mobile terminal application

Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications

BiCMOS Devices and RF Integrated Circuits

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