Anomalies such as leakage and bursts in water pipelines have severe consequences for the environment and the economy. To ensure the reliability of water pipelines, they must be monitored effectively. Wireless Sensor Networks (WSNs) have emerged as an effective technology for monitoring critical infrastructure such as water, oil and gas pipelines. In this paper, we present a scalable design and simulation of a water pipeline leakage monitoring system using Radio Frequency IDentification (RFID) and WSN technology. The proposed design targets long-distance aboveground water pipelines that have special considerations for maintenance, energy consumption and cost. The design is based on deploying a group of mobile wireless sensor nodes inside the pipeline and allowing them to work cooperatively according to a prescheduled order. Under this mechanism, only one node is active at a time, while the other nodes are sleeping. The node whose turn is next wakes up according to one of three wakeup techniques: location-based, time-based and interrupt-driven. In this paper, mathematical models are derived for each technique to estimate the corresponding energy consumption and memory size requirements. The proposed equations are analyzed and the results are validated using simulation.

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High-quality and defect-free GaAs were successfully grown via molecular beam epitaxy on silicon dioxide patterned Si(111) substrates by a two-step growth technique. Compared with the one-step approach, the two-step growth scheme has been found to be a better pathway to obtain a superior-quality GaAs on Si. Taking advantages of low energy for both Si(111) surface and GaAs/Si(111) interface, the two-step grown GaAs of total ∼175 nm atop patterned Si(111) substrates exhibits atomically smooth surface morphology, single crystallininty and a remarkably low defect density. A low-temperature GaAs nucleation layer of the two-step growth helps relieve the misfit stress by accommodating the misfit dislocations at the very adjacent GaAs/Si interface. The excellent properties of the two-step grown GaAs were investigated and verified by field-emission scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Finally we demonstrated a GaAs on Si solar cell, which could represent an important milestone for future applications in light-emitting diodes, lasers, and photodetectors on Si.

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