A 2.8-mW Sub-2-dB Noise-Figure Inductorless Wideband CMOS LNA Employing Multiple Feedback

A Low Power 5.8GHz Fully Integrated CMOS LNA for Wireless Applications

“…Figure 9 shows the simulated stability factors Kf and Bf versus frequency characteristics of the LNA. According to the Rollett stability criteria for unconditional stability, defined as [11] …”

An Inductor-less Sub-mW Low Noise Amplifier for Wireless Sensor Network Applications

“…In this circuit, the differential voltage gain and the differential input impedance are given by: [13]. The noise factor in the perfect matching condition (R in ¼ 2R s ¼ 100 Ω) is then given by: F ¼ 1 þðϒ =αÞþ4R S = R L which g m1 is the transconductance of the input transistor M1, ϒ is the excess channel thermal noise coefficient, and α is the ratio between g m and the zero-bias drain conductance g d0 [13]. With the low supply voltages of modern CMOS processes, the load resistance must also be low due to stringent headroom condition, resulting in low gain and increased noise figure.…”

“…In order to overcome the disadvantages of the common-gate amplifier in terms of noise and power consumption the Capacitive Cross-Coupling (CCC) technique was introduced [13][14][15]. The Capacitive Cross-Coupling structure is shown in Fig.…”

Analysis and design of wideband common-gate low noise amplifier

“…Based on the pervious analysis, the optimum design point to maximize FOM is obtained by: (1) choosing the width of the transistor according to (4) and (2) choosing the current such that IIP3 is maximized according to (5 …”