A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel

Wang, Min; Ke, Daoming; Xu, Chenchu; Wang, Bao-Tong

doi:10.1016/j.sse.2013.10.017

Cited by 5 publications

(7 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although empirical models describing planar capacitive sensor exist, they do not provide actual insight into the interaction of the electric field with the moving object nor do they explain the actual interaction of different parameters in the sensing mechanism. With this in mind, to explore the fringe effect of parasitic capacitance for nanoscale metaloxide-semiconductor field-effect transistor (MOSFETs), several full/semi analytical models have been established by the conformal mapping method [32][33][34][35]. They were also able to estimate, optimize, and compare the fringe capacitance through simulation results without any fitting parameters.…”

Section: Introductionmentioning

confidence: 99%

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

et al. 2020

View full text Add to dashboard Cite

A mathematical model of fringe capacitance for a nano-based proximity sensor, which takes the presence of different resistivities into account, is developed. An analytical solution obtained for a rectangular-shape sensor with applying of Gauss, Conversation of Charge and Ohm laws into Laplace's equation 2 ( , , , ) = 0 gives the electric potential distribution by which the fringe capacitance in a 2D domain area can be calculated. The calculated capacitance evidently decreases drastically due to the fringe phenomena while object moves toward the polymeric sensor. The model also asserts that the change of capacitance is under a noticeable influence of sensor resistivity, particularly in the range of 10 3 -10 5 Ω.m, the initial capacitance varies from 0.045pF to 0.024 pF. The fabricated flexible nanocomposite sensors, Thermoplastic Polyurethane (TPU) reinforced by 1wt.% Carbon Nanotubes (CNTs) having resistivity 10P 5 P Ω.m, are capable of detecting presence of an external object in a wide range of distance and indicating remarkable correlation with the mathematical solution.Our proximity sensor fabrication is straightforward and relatively simple. An unprecedented detection range of measurement reveals promising ability of this proximity sensor in applications of motion analysis and healthcare systems.

show abstract

Section: Introductionmentioning

confidence: 99%

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…All the devices have the same aspect ratio; it can be considered that their C 2D is basically the same. In addition, according to eq , compared to C 2D in the μF/cm 2 range, C fr in the pF/cm 2 range is negligible . Therefore, C S is basically the same under the same device structure and preparation process conditions.…”

Section: Resultsmentioning

confidence: 87%

“…In addition, according to eq 1, compared to C 2D in the μF/cm 2 range, C fr in the pF/cm 2 range is negligible. 36 Therefore, C S is basically the same under the same device structure and preparation process conditions.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Guo

Wang

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ferroelectric materials in the gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their ferroelectric properties were adjusted by changing the annealing temperature and the thickness of HZO. Two-dimensional MoS2 back-gate negative capacitance field-effect transistors (NCFETs) based on HZO were prepared as well. Different annealing temperatures, thicknesses of HZO thin films, and Al2O3 thicknesses were studied to achieve optimal capacitance matching, aiming to reduce both the subthreshold swing of the transistor and the hysteresis of the NCFET. The NCFET exhibits a minimum subthreshold swing as low as 27.9 mV/decade, negligible hysteresis (∼20 mV), and the I ON/I OFF of up to 1.58 × 107. Moreover, a negative drain-induced barrier lowering effect and a negative differential resistance effect have been observed. This steep-slope transistor is compatible with standard CMOS manufacturing processes and attractive for 2D logic and sensor applications as well as future energy-efficient nanoelectronic devices with scaled power supplies.

show abstract

“…Given these issues, it is necessary to choose a suitable high-k material to replace SiO 2 as the gate dielectric layer. [13][14][15] Nonetheless, high-k gate dielectrics also have their problems. There are considerable measures of interface fixed charges and interface traps between a high-k dielectric and a silicon film, and these problems reduce carrier mobility and distort the curve of current-voltage (C-V ) characteristics.…”

Section: Introductionmentioning

confidence: 99%

Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO₂ stacked gate structure

Ke¹,

Wu²,

Meng³

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

In this paper, a high-k stacked and SiO2 gate structure is proposed for the fully depleted silicon-on-insulator (FDSOI) MOSFET. We constructed a two-dimensional (2D) model to compute its subthreshold surface potential, threshold voltage, drain-induced barrier lowering (DIBL) effect and fringing-induced barrier lowering (FIBL) effect. Given the structure and wide range of dielectric permittivities of a FDSOI MOSFET, the device in the subthreshold mode is separated into four distinct rectangular equivalent sources, 2D boundary value problems of the Poisson and Laplace equation are built on the polygon region. We used the eigenfunction expansion to solve the 2D boundary value problems and obtain their semianalytical solutions. The computational outcomes demonstrate that the high-k and SiO2 stacked gate structure can suppress the degradation of the FDSOI MOSFET threshold voltage and the aggravation of the DIBL effect. The computational cost of this model is much lesser than traditional models; thus, it can be used for circuit simulators and modeling of FDSOI MOSFETs.

show abstract

A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel

Cited by 5 publications

References 8 publications

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO₂ stacked gate structure

Contact Info

Product

Resources

About

A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel

Cited by 5 publications

References 8 publications

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors

Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO2 stacked gate structure

Contact Info

Product

Resources

About

Optimization of Subthreshold Swing and Hysteresis in Hf_0.5Zr_0.5O₂-Based MoS₂ Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO₂ stacked gate structure