A 2-kW, 95% Efficiency Inductive Power Transfer System Using Gallium Nitride Gate Injection Transistors

Cai, Aaron; Siek, Liter

doi:10.1109/jestpe.2016.2632743

Cited by 39 publications

(13 citation statements)

References 23 publications

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“…The driver IC selection was limited in the writing of this paper (2016), so the selected driver failed to meet the common-mode transient immunity (CMTI) requirement of over 150 V/ns, but no failure occurred during testing. In [ 52 ], a 2 kW inductive power transfer system was designed based on a 600 V GaN gate injection transistor (GIT). The slew rate was lowered so that the Analog Devices ADuM3223, which had state of the art CMTI capability of 50 V/ns back in 2016, was compatible.…”

Section: Review On Gan Hemt Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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Section: Review On Gan Hemt Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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“…In the SBP inverter, only one-stage conversion takes place and hence results in lesser losses and reduces the cost [76]. A pulse amplitude modulation (PAM) inverter was introduced in HEV to obtain high performance [77][78][79][80][81][82]. A fault-tolerant 4-leg topology was proposed in [83].…”

Section: Impedance Source Invertermentioning

confidence: 99%

A comprehensive review on hybrid electric vehicles: architectures and components

2019

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The rapid consumption of fossil fuel and increased environmental damage caused by it have given a strong impetus to the growth and development of fuelefficient vehicles. Hybrid electric vehicles (HEVs) have evolved from their inchoate state and are proving to be a promising solution to the serious existential problem posed to the planet earth. Not only do HEVs provide better fuel economy and lower emissions satisfying environmental legislations, but also they dampen the effect of rising fuel prices on consumers. HEVs combine the drive powers of an internal combustion engine and an electrical machine. The main components of HEVs are energy storage system, motor, bidirectional converter and maximum power point trackers (MPPT, in case of solar-powered HEVs). The performance of HEVs greatly depends on these components and its architecture. This paper presents an extensive review on essential components used in HEVs such as their architectures with advantages and disadvantages, choice of bidirectional converter to obtain high efficiency, combining ultracapacitor with battery to extend the battery life, traction motors' role and their suitability for a particular application. Inclusion of photovoltaic cell in HEVs is a fairly new concept and has been discussed in detail. Various MPPT techniques used for solar-driven HEVs are also discussed in this paper with their suitability. Keywords Hybrid electric vehicle Á Hybrid energy storage system Á Architecture Á Traction motors Á Bidirectional converter Abbreviations and symbols ABS Antilock braking system AC Alternating current ADTR Antidirectional-twin-rotary ADVISOR Advanced vehicle simulator ANN Artificial neural network ASCI Auto-sequential commutated mode singlephase inverter BEV Battery electric vehicle BLDC Brushless DC motor CD Charge depletion CDFIM Cascaded DFIM CF-qZSI Current-fed quasi-ZSI CMPPT Centralized MPPT CS Charge sustaining CSI Current source inverter CS-PMSM Compound-structure PMSM CVT Continuous variable transmission DC Direct current DFIM Doubly fed induction motor DMPPT Distributed MPPT DRM Double-rotor machines DTC Direct torque control e-CVT Electronic continuous variable transmission EM Electric motor EMS Energy management system EREV Extended range electric vehicle ESS Energy storage system EV Electric vehicle FC Fuel cell

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“…The obtained static and dynamic characteristics based on an inverter prototype showed excellent switching performance of GaN HEMTs under wide load current and temperature conditions. A 370/400-V, 2-kW, 100-and 250-kHz, 95% efficiency IPT system was presented in Reference [136]. The inverter was designed to ensure low switching losses while keeping the desired overshoot and slew rates.…”

Section: Single-phase Dc-ac Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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A 2-kW, 95% Efficiency Inductive Power Transfer System Using Gallium Nitride Gate Injection Transistors

Cited by 39 publications

References 23 publications

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

A comprehensive review on hybrid electric vehicles: architectures and components

Review of GaN HEMT Applications in Power Converters over 500 W

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