A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications

Wu, D.S.; Parkhurst, R.; Fu, Shyh-Liang; Wei, Jin; Su, Ching‐Yuan; Chang, Shih-Shun; Moy, D.; Fields, W.; Chye, P.; Levitsky, R.

doi:10.1109/mwsym.1997.596570

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A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications

Cited by 21 publications

References 11 publications

An Improved Performance of High Power Application of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study

An Improved Performance of High Power Application of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study

A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications

Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

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