Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

Lu, Shey‐Shi; Hsu, Yao-Wen; Meng, Chinchun; Chen, Liang-Po

doi:10.1109/55.737561

Cited by 13 publications

(3 citation statements)

References 17 publications

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“…7 Consequently, samples A and C have shown comparably superior power characteristics, including P out of 13.29 ͑213.3͒/12.75 ͑188.4͒ dBm ͑mW/mm͒, G s of 17.11/17.05 dB, and PAE of 49.03/48.84%, as compared to those of sample B and the insulated-gate FET. 13 The noise characteristics with their respective gate-bias conditions for samples A, B, and C are also listed in Table III, respectively. It was characterized over a frequency range of 1.2 to 7.2 GHz at 300 K using an HP8970B noise figure meter.…”

Section: Resultsmentioning

confidence: 99%

Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

Lee

Chen

Huang

et al. 2007

J. Electrochem. Soc.

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This work provides comparative studies of a double ␦-doped Al 0.3 Ga 0.7 As/In x Ga 1−x As/GaAs symmetrically graded ͑x = 0.15 → 0.2 → 0.15͒ doped-channel field-effect transistor ͑DD-DCFET͒ with respect to a conventional double ␦-doped pseudomorphic high electron mobility transistor ͑pHEMT͒ and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition ͑LP-MOCVD͒ system, have identical layer structures except for their different doping schemes. Comprehensive investigations on the static, microwave, and temperature-dependent characteristics have been made. Possessing the advantages of DCFETs and pHEMTs, the proposed DD-DCFET has demonstrated comprehensively superior linearity, current drive, voltage gain, high-frequency characteristics, and thermal stability characteristics. It is promisingly suitable for millimeter-wave integrated circuit applications.Over the past years, various compound semiconductor highspeed devices have been devised to meet the growing demands of millimeter-wave integrated circuit ͑MMIC͒ applications. 1,2 The advanced development in the epitaxial systems, 3,4 such as the metallorganic chemical vapor deposition ͑MOCVD͒ and the molecularbeam epitaxy ͑MBE͒ technologies with precise control of growth specifications, has stimulated prosperous investigations in the highspeed heterostructure field-effect transistor ͑HFET͒ designs. 5-8 The doped-channel field-effect transistors ͑DCFETs͒, due to their distinguished doped-channel structure design, have demonstrated distinguished linearity characteristics, because electrons in the channel being attracted to their ionized donors are difficult to be depleted by the decreased gate biases. However, the intrinsic ionized impurity scattering 9 in DCFETs degrade the carrier transport properties. The pseudomorphic high electron mobility transistors ͑pHEMTs͒ preventing the ionized impurity scattering have demonstrated superior high-gain performances. The double ␦-doping techniques have also been employed to enhance the two-dimensional electron gas ͑2DEG͒ concentration and current-drive capability. Nevertheless, the linearity issue may need to be improved as compared to the performance of DCFET structures.By inheriting the distinguished performance from DCFET and pHEMT structures, respectively, this work proposes a double ␦-doped Al 0.3 Ga 0.7 As/In x Ga 1−x As/GaAs symmetrically graded ͑x = 0.15 → 0.20 → 0.15͒ DCFET to provide comprehensively superior high-gain, high-power, and high-linearity performances. Devising a symmetrically graded InGaAs channel can effectively increase the discontinuity barrier height within the channel/buffer heterostructure to further improve its channel confinement capability. Comparative studies of various device characteristics have been made with respect to a ␦-doped pHEMT and a DCFET, correspondingly, in the present work. Material Growth and Device FabricationThe studied structures were grown by the LP-MOCVD deposition system on the semi-insulating ͑SI͒ GaAs substrates. T...

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Section: Resultsmentioning

confidence: 99%

Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

Lee

Chen

Huang

et al. 2007

J. Electrochem. Soc.

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“…In particular, there are several advantages for the InGaP-InGaAs HDCFETs when compared to AlGaAs-InGaAs ones. These key advantages are (1) easy control in the gate recess where the cap layer is selectively removed by wet etching to expose the underlying layer for Schottky-metal formation [9,10] and (2) low deep level concentration and low reactivity with oxygen associated with the InGaP Schottky barrier layer. However, an enhanced breakdown voltage is continuously demanded for higher power devices with good linearity that can minimize inter-modulation distortion.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors

Chen

Hsu

Chiu

et al. 2007

Semicond. Sci. Technol.

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Heterojunction doped-channel field-effect transistors (HDCFETs) with a self-built field-plate gate formation were fabricated and proposed in this work. Arrangement of Schottky metal across a step undercut between the Schottky barrier and the insulator-like layer is the key process to produce a self-built field-plate gate. A controllably reduced gate length and a self-built field plate were simultaneously formed. Effects of gate-metal length, field-plate length and insulator thickness on HDCFET performance were also investigated. Simulated results reveal that higher currents, lower electric fields, better device linearity and larger output power are expected by offsetting the Schottky metal towards the drain side. A HDCFET with gate-metal length of 0.4 µm, field-plate length of 0.6 µm and insulator thickness of 120 nm was successfully fabricated for comparison to that with a 1 µm traditional planar gate. Current density (451 mA mm −1 ), transconductance (225 mS mm −1 ), breakdown voltages (V BD(DS) /V BD(GD) = 22/−25.5 V), gate-voltage swing (2.24 V), unity current-gain and powergain frequencies ( f t /f max = 17.2/32 GHz) are improved as compared to those of a 1 µm gate device without field plates. At 1.8 GHz and V DS of 4.0 V, maximum power-added efficiency of 36% with output power of 13.9 dBm and power gain of 8.7 dB was obtained. Saturated output power and linear power gain are 316 mW mm −1 and 13 dB, respectively.

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“…This is because of the reduction of the aspect ratio (a/L g , where a is the effective distance between the gate metal and the channel, and L g is the gate length) [3,4]. Further, InGaP-related HDCFETs are considered as an alternate choice in replacing AlGaAs-and InAlAs-related ones [5][6][7]. In addition to the elimination of DX centres and thermal oxidation associated with the Al-content material, the very high selective wet etching between an InGaP and a GaAs layer also simplifies device fabrication and offers special gate formation [8,9].…”

Section: Introductionmentioning

confidence: 99%

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Tan¹,

Hsu²,

Lin³

et al. 2003

Semicond. Sci. Technol.

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This paper reports the formation of GaAs V-grooves with well-controllable notch angles. The key methodology used to control the notch angle of a V-groove is to preset the temperature of the etching chemicals. Due to increased chemical reaction at the GaAs surface at high temperature, diffusion-limited etching dominates the etched process, resulting in highly isotropic etched profiles. It is found that the notch angle of a V-groove increases with increasing temperature of the etching chemicals. The etching angle used to define the slope of a V-groove increases from 30 to 55 • as the temperature decreases from 96 • C to 0 • C. Then V-gates formed by depositing Au metal on V-grooves with different notch angles were employed in the fabrication of InGaP/InGaAs heterojunction doped-channel FETs (HDCFETs). Effects of temperature-dependent notch angle on V-gate HDCFETs were investigated in detail, including dc, ac performances and short-channel effects. Experimental results reveal that a small notch-angle V-gate is quite promising for high-frequency applications. Finally, comparisons between simulated results for planar-gate HDCFETs and experimental results for V-gate HDCFETs are used to determine the equivalent gate length of a V-gate. It is found that the equivalent gate length of a V-gate is in the range of 0.1-0.2 µm.

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Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

Cited by 13 publications

References 17 publications

Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

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