A 20-Gb/s Transformer-Based Current-Mode Optical Receiver in 0.13- $\mu\hbox{m}$ CMOS

Han, Jaehong; Choi, Boo-Young; Seo, Mikyung; Yun, Jisook; Lee, Dong-Myung; Kim, Tae-Wook; Eo, Yunseong; Park, Sung Min

doi:10.1109/tcsii.2010.2047309

Cited by 33 publications

(4 citation statements)

References 5 publications

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“…Recently, light detection and ranging (LiDAR) sensors have been popular in various areas such as advanced driver assistance systems for unmanned vehicles, remote sensing detection and navigation systems for robots, and monitoring systems for dementia patients in long-term care facilities [1,2]. Most LiDAR sensors exploit the well-known pulsed timeof-flight mechanism that ensures the successful scan operations ranging up to several hundred meters.…”

Section: Introductionmentioning

confidence: 99%

A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS

Hu,

Joo,

Zhang

et al. 2023

Photonics

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This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+/Deep N-well (DNW) APD for its improved near-infrared (NIR) sensitivity; and a P+/NW/DNW APD for its capability to prevent premature edge breakdown and improve NIR sensitivity. Thereafter, a conventional voltage-mode optoelectronic receiver (V-OER) was realized to confirm the feasibility of the three on-chip APDs. However, the measured results of the V-OER demonstrate a very narrow dynamic range. Therefore, we propose a current-mode optoelectronic receiver (C-OER) realized in the same CMOS process for the applications of short-range LiDAR sensors, where current-conveyor input buffers are exploited to deliver the photocurrents with no significant signal loss to the following inverter cascode transimpedance amplifier, hence resulting in an extended dynamic range. The optically measured results of the C-OER with an 850 nm laser source demonstrate large output pulses. The C-OER chip consumes 47.8 mW from a 1.8 V supply and the core occupies 0.087 mm2.

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Section: Introductionmentioning

confidence: 99%

A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS

Hu,

Joo,

Zhang

et al. 2023

Photonics

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“…Compared with copper-based links, the optical interconnection is a more costeffective and reasonable solution due to its excellent stability, high-power efficiency, low-cost and broadband superiorities. A typical optical communication receiver mainly includes a transimpedance amplifier (TIA), limiting amplifier (LA), clock and data recovery (CDR) and de-multiplexer (DMUX) [1] . Among them, the TIA is the most critical block as it plays a crucial role in determining the noise, sensitivity and bandwidth performance of the whole receiver system.…”

Section: Introductionmentioning

confidence: 99%

“…Among them, the TIA is the most critical block as it plays a crucial role in determining the noise, sensitivity and bandwidth performance of the whole receiver system. Various circuits designs, based on a common gate (CG) [2] , regulated cascode (RGC) [1,3,4] and shunt resistive feedback [5,6] configurations, have been presented to enlarge the TIA bandwidth. The biggest challenge of the TIA design comes from the large parasitic capacitance of the photodetector (PD), which limits both bandwidth and noise performance.…”

Section: Introductionmentioning

confidence: 99%

A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications

Pan

Luo

2022

J. Semicond.

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This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process. Multiple bandwidth enhancement techniques, including input bonding wire, input series on-chip inductive peaking and negative capacitance compensation, are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device, achieving an overall bandwidth enhancement ratio of 8.5. The electrical measurement shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector. The optical measurement demonstrates a clear open eye of 20 Gb/s. The TIA dissipates 4 mW from a 1.2-V supply voltage.

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“…One prominent challenge in TIA design stems from the potentially large photodiode parasitic capacitance, which deteriorates both the system bandwidth and its noise performance [3,4]. Therefore, various circuit techniques have been demonstrated to relax bandwidth limitations, including the regulated cascode (RGC) configuration [5], capacitive degeneration techniques [6,7], and wideband matching networks using series inductive peaking and shunt inductive peaking techniques [8].…”

Section: Introductionmentioning

confidence: 99%

Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

Song

Mao

Xie

2015

IEICE Electron. Express

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A novel bandwidth enhancement technique based on a modified regulated cascode (RGC) transimpedance amplifier (TIA) is proposed and realized. The post stage of the TIA adopts capacitive degeneration and π-type peaking network, maintaining the wideband and low group delay characteristics without increasing power dissipation. The TIA is implemented in a 0.18 µm SiGe BiCMOS technology and tested with an on-chip 300 fF capacitor to emulate a photodiode. The measured transimpedance gain is 61 dBΩ with a −3 dB bandwidth of 15 GHz. The chip consumes 32 mW power from a single 3.3 V supply and occupies the area of only 0.3 mm 2 .

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A 20-Gb/s Transformer-Based Current-Mode Optical Receiver in 0.13- $\mu\hbox{m}$ CMOS

Cited by 33 publications

References 5 publications

A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS

A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS

A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications

Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

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