A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment

Abstract

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294GHz, formed by common-source configured 35nm Lg InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain gain is 11-16dB, 3dB bandwidth at 294GHz, and 82.5mW Pdc. This is the first reported InP HEMT MMIC operating in G-,H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0. and amplifier (210-320GHz) measurements are presented from an unthinned, 25mil substrate. The total size of this 3-stage amplifier is only 0.77mm x 0.40mm.

High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

“…The HEMT gate and drain bias voltages are common to all stages -V ds = 1.05 V, V g =50 mV, I d,total = 64.7 mA, P total = 82.5 mW. Complete details of this amplifier can be found in [9].…”

“…From Mason's unilateral power gain, an f max of 580 GHz was extrapolatedthis is consistent with the TSC large signal model. Description of the measurements can be fournd in [9]. Figure 6 shows the NF and associated gain measurement results of a 35nm L g , 2×20 μm W g device after circuit fabrication at g m peak bias condition.…”

A 330–500GHz micro-machined directional coupler

“…As technology pushes into the THz spectrum, the demand for measurement systems capable of characterizing THz components has increased [1]- [2]. Among many other applications, waveguide couplers are used to sample mm wave power for measurements as well as to combine mm wave frequencies.…”