High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

Abstract

We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm L g device showed RF figures-of-merit of 533 GHz f τ and 343 GHz f max . After full circuit processing, encapsulated in BCB, a 35nm L g , 2×20um W g mHEMT showed 387GHz f τ , 580GHz f max . Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206-294GHz) 3-stage G-, Hband common-source amplifier having a nominal S 21 mid-band gain of 11-16dB employing thin-film microstrip wiring. Keywords-InP high electron mobility transistor; metamorphic low loss dielectric layer; mutiple interconnect layer; D-mode transistor; E-mode transistor; feedback amplifierI.

Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

“…Backside processing can be omitted. [3] used for the first time front-side thin-film microstrip lines (TFMS) for the design of a 35 nm mHEMT based 3-stage amplifier at H-band having a gain of 11 -16 dB from 206 to 294 GHz. Previously this transmission line implementation was reserved to InP HBT based amplifier designs [4].…”