ALD Al 2 O 3 passivation of Lg  = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology. The channel of the new device is In0.7Ga0.3As, and the gate length is 100 nm. A maximum extrinsic transconductance g m,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained. The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz. In addition, a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

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ALD Al 2 O 3 passivation of Lg  = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

Cited by 4 publications

References 23 publications

Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

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ALD Al 2 O 3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

Cited by 4 publications

References 23 publications

Investigation of DC-RF and breakdown behaviour in L g = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

Investigation of DC-RF and breakdown behaviour in L g = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Contact Info

Product

Resources

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ALD Al 2 O 3 passivation of Lg  = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications

Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications