A 219-GHz fundamental oscillator with 0.5 mW peak output power and 2.08% DC-to-RF efficiency in a 65 nm CMOS

Kwon, Hyeok-Tae; Nguyen, Thanh Dat; Hong, Jong-Phil

doi:10.1109/mwsym.2016.7540423

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…Though a fundamental frequency oscillator is widely adopted for generating an output signal having oscillation frequency smaller than f max [3][4][5][6][7], but a fundamental frequency oscillator cannot generate a high frequency output signal that has oscillation frequency greater than f max . Therefore, a harmonic frequency oscillator is a viable solution to overcome the low f max of CMOS technology and to generate a high frequency output signal that has oscillation frequency greater than f max .…”

Section: Introductionmentioning

confidence: 99%

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Nguyen

Hong

2020

Electronics

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This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

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Section: Introductionmentioning

confidence: 99%

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

Nguyen

Hong

2020

Electronics

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A compact 213 GHz CMOS fundamental oscillator with 0.56 mW output power and 3.9% efficiency using a capacitive transformer

Wang

Kuzmenko

et al. 2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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This paper presents a compact 213 GHz fundamental oscillator with an optimal embedding network that maximizes the output power. Fabricated in 65-nm bulk CMOS, the oscillator occupies a core area of only 70×40 µm 2 , owing to the use of a compact low-loss capacitive transformer structure. The oscillator achieves 0.56-mW output power while consuming a DC current of 14.35 mA from a 1-V power supply, representing a recordingbreaking DC-to-RF efficiency of 3.9% amongst fundamental oscillators above 200 GHz.

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A 194 GHz fundamental frequency oscillator with 1.85 mW differential output power in 65nm CMOS

Nguyen

Hong

2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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A 219-GHz fundamental oscillator with 0.5 mW peak output power and 2.08% DC-to-RF efficiency in a 65 nm CMOS

Cited by 3 publications

References 5 publications

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

A compact 213 GHz CMOS fundamental oscillator with 0.56 mW output power and 3.9% efficiency using a capacitive transformer

A 194 GHz fundamental frequency oscillator with 1.85 mW differential output power in 65nm CMOS

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