A 24.9-GHz emitter-degenerated SiGe bipolar VCO

Zhan, Zhan; Duster,; Kornegay, K.T.

doi:10.1109/bipol.2003.1274938

Cited by 10 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5(b) shows the measured free-running phase noise at 25.21 GHz by Agilent 8564 EC, which is 93.3 dBc/Hz. The measurement was refined after replacing the power supplies used in [3]. The VCO achieved ratio over 50% while offering a figure of merit (FOM) of 174 dB, which demonstrates that the emitter-degeneration technique is a useful method for designing VCOs requiring high ratios.…”

Section: Resultsmentioning

confidence: 99%

“…The latter is denoted by because it has the frequency characteristics of an inductor. The overall tank impedance looking into the collectors is given by (3), shown at the bottom of the next page, where , , and are as shown in Fig. 1.…”

Section: Emitter-degenerated Vco Design and Analysismentioning

confidence: 99%

“…This tradeoff can be avoided by emitter degenerating the voltage-controlled oscillator (VCO) as in Fig. 1(b) and (c) [2], [3]. Design equations and experimental measurements of emitter-degenerated VCOs will be presented in this paper.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 25-GHz emitter degenerated LC VCO

Zhan

Duster

Kornegay

2004

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

A 25-GHz emitter degenerated bipolar LC voltagecontrolled oscillator (VCO) designed in IBM's SiGe 6 HP BiCMOS process ( T 47 GHz) is presented. Including output buffers, the VCO occupies an area of 435 m 225 m and consumes 22 mW at a 1.9-V power supply. The phase noise at 1 MHz offset is 93 dBc/Hz and it achieves a high OSC T ratio with a figure of merit of 174 dB.Index Terms-Voltage-controlled oscillator (VCO), emitter degeneration, oscillation frequency, tuning range, phase noise.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Emitter-degenerated Vco Design and Analysismentioning

confidence: 99%

See 1 more Smart Citation

A 25-GHz emitter degenerated LC VCO

Zhan

Duster

Kornegay

2004

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

show abstract

“…The parasitic capacitors of the cross-coupled bipolar transistors have also to be taken into account in order to guarantee the oscillation frequency. The linearity and the stability of the oscillation have been improved by adding two 500fF degenerative capacitors in the emitters of cross-coupled transistors [7]- [8]. These transistors of the negative resistance are self-biased with resistors.…”

Section: Design Of the Lc-vcomentioning

confidence: 98%

A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications

Toupe¹,

Deval²,

Bégueret³

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

View full text Add to dashboard Cite

This paper presents a 125GHz LC-VCO dedicated to mmW applications. It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a f t and f max of 260GHz and 340GHz respectively. Under a nominal power supply of 1.8V, the 125GHz VCO dissipates 54mA (with output buffers) for a measured phase noise of -75dBc/Hz at 1MHz offset from the 125GHz carrier and achieves a tuning range of 2GHz with a size of 0.25 mm 2 .

show abstract

A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO

Zhan

Duster

Kornegay

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

View full text Add to dashboard Cite

A 24.9-GHz emitter-degenerated SiGe bipolar VCO

Cited by 10 publications

References 15 publications

A 25-GHz emitter degenerated LC VCO

A 25-GHz emitter degenerated LC VCO

A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications

A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO

Contact Info

Product

Resources

About